Allicdata Part #: | PDTC114EQAZ-ND |
Manufacturer Part#: |
PDTC114EQAZ |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 3DFN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC114EQAZ Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.02514 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | 230MHz |
Power - Max: | 280mW |
Mounting Type: | Surface Mount |
Package / Case: | 3-XDFN Exposed Pad |
Supplier Device Package: | DFN1010D-3 |
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The PDTC114EQAZ is a single, pre-biased, bipolar junction transistor (BJT). It is a three-terminal device that can be used to amplify electrical signals, switch loads, and create feedback circuits.
The PDTC114EQAZ is commonly used in a variety of applications, including amplifiers for audio, TV and radio, switching action for appliances and tools, high-frequency inverters, voltage regulators and drivers for large motors, and many other circuits. Due to its high collector-to-emitter breakdown voltage up to 180V and its low saturation voltage, it can be used in a variety of applications.
The most basic working principle of the PDTC114EQAZ is the same as other bipolar transistors. It consists of three terminals – base, collector and emitter. Electricity is applied to the base terminal to activate the transistor, which will lead to the current flow between the collector and emitter terminals. This transfer of current through the transistor is known as gain or amplification, which allows the transistor to be used in various applications.
In order to understand how the PDTC114EQAZ works, it is important to understand that the base and collector pins of a transistor act as a diode. When the base voltage is applied, the base-emitter diode is forward-biased and the base-collector diode is reverse-biased. As current flows through the base-emitter diode, the voltage at the base and emitter terminals decrease, allowing a considerable amount of current to flow through the collector-emitter circuit. This amplified current can then be used to drive and control loads.
The PDTC114EQAZ is often referred to as a pre-biased transistor, meaning that the base voltage is pre-set for operation. This simplifies the circuitry as there is less need for additional components. This type of BJT is commonly used in RF amplifiers and low noise amplifiers due to its high gain and low power consumption.
In summary, the PDTC114EQAZ is a single, pre-biased, bipolar junction transistor. It is a three-terminal device and can be used to amplify electrical signals, switch loads, and provide feedback circuits. It is commonly used in a variety of applications due to its high collector-to-emitter breakdown voltage and its low saturation voltage. The working principle of the PDTC114EQAZ is based on the voltage applied the base and collector pins acting as a diode, which allows current to flow through the transistor and be used to control and drive loads.
The specific data is subject to PDF, and the above content is for reference
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