
Allicdata Part #: | 1727-3038-2-ND |
Manufacturer Part#: |
PDTC124EM,315 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 250MW SOT883 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.02090 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | DFN1006-3 |
Base Part Number: | PDTC124 |
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The PDTC124EM,315 is a single pre-biased bipolar junction transistor (BJT) that has a variety of applications and a distinct working principle. Created by NXP Semiconductors, this general-purpose transistor is widely used in amplifier, switching, and other circuits, and can handle a wide range of voltages and currents. It operates on the basis of a fraction of the base current being multiplied or amplified by the collector-emitter current.
The PDTC124EM,315 has several features that make it ideal for pre-biased applications. First, it is NPN type, which means that it requires negative bias for proper operation. Second, it is constructed with a digitally matched collector and emitter, allowing for a more uniform output current than standard BJTs. Finally, the PDTC124EM,315 also has an adjustable emitter current, allowing for some customization and fine-tuning of the circuit.
In terms of applications, the PDTC124EM,315 can be used in a variety of fields as mentioned before. It has been used in amplifier and switching circuits in multiple sensors, communication systems, low-level and high-power amplifiers, and driver and line stages in audio equipment. Its wide range of capabilities makes it suitable for a variety of projects, and its pre-biased design is useful for more specific applications.
The main principle behind the PDTC124EM,315 is that it uses an internal fraction of the base current to generate a much larger collector-emitter current. By using this principle, the transistor is able to amplify a signal and produce responses. Moreover, due to its pre-biased configuration, this transistor is able to quickly activate a circuit and produce the desired response in a timely manner.
In conclusion, the PDTC124EM,315 is a highly versatile single pre-biased bipolar junction transistor. With its wide range of applications, adjustable emitter current, and ability to quickly activate a circuit, it is an ideal solution for many types of projects. Thanks to its unique working principle, it is able to amplify a signal and produce a need response in any situation.
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Part Number | Manufacturer | Price | Quantity | Description |
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PDTC114ET,235 | Nexperia USA... | 0.01 $ | 1000 | TRANS PREBIAS NPN 250MW T... |
PDTC124EM,315 | Nexperia USA... | 0.02 $ | 1000 | TRANS PREBIAS NPN 250MW S... |
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PDTC115ET,215 | Nexperia USA... | 0.02 $ | 1000 | TRANS PREBIAS NPN 250MW T... |
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