PDTC124EM,315 Allicdata Electronics
Allicdata Part #:

1727-3038-2-ND

Manufacturer Part#:

PDTC124EM,315

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 250MW SOT883
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC124EM,315 datasheetPDTC124EM,315 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02090
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Base Part Number: PDTC124
Description

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The PDTC124EM,315 is a single pre-biased bipolar junction transistor (BJT) that has a variety of applications and a distinct working principle. Created by NXP Semiconductors, this general-purpose transistor is widely used in amplifier, switching, and other circuits, and can handle a wide range of voltages and currents. It operates on the basis of a fraction of the base current being multiplied or amplified by the collector-emitter current.

The PDTC124EM,315 has several features that make it ideal for pre-biased applications. First, it is NPN type, which means that it requires negative bias for proper operation. Second, it is constructed with a digitally matched collector and emitter, allowing for a more uniform output current than standard BJTs. Finally, the PDTC124EM,315 also has an adjustable emitter current, allowing for some customization and fine-tuning of the circuit.

In terms of applications, the PDTC124EM,315 can be used in a variety of fields as mentioned before. It has been used in amplifier and switching circuits in multiple sensors, communication systems, low-level and high-power amplifiers, and driver and line stages in audio equipment. Its wide range of capabilities makes it suitable for a variety of projects, and its pre-biased design is useful for more specific applications.

The main principle behind the PDTC124EM,315 is that it uses an internal fraction of the base current to generate a much larger collector-emitter current. By using this principle, the transistor is able to amplify a signal and produce responses. Moreover, due to its pre-biased configuration, this transistor is able to quickly activate a circuit and produce the desired response in a timely manner.

In conclusion, the PDTC124EM,315 is a highly versatile single pre-biased bipolar junction transistor. With its wide range of applications, adjustable emitter current, and ability to quickly activate a circuit, it is an ideal solution for many types of projects. Thanks to its unique working principle, it is able to amplify a signal and produce a need response in any situation.

The specific data is subject to PDF, and the above content is for reference

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