PDTC144VM,315 Allicdata Electronics
Allicdata Part #:

PDTC144VM,315-ND

Manufacturer Part#:

PDTC144VM,315

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 250MW SOT883
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC144VM,315 datasheetPDTC144VM,315 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02090
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Base Part Number: PDTC144
Description

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PDTC144VM,315 is a single pre-biased bipolar junction transistor (BJT). It is a device designed to amplify signals from an input voltage or current source or switch heavy current or voltage loads, making them a popular choice for various power management applications for consumer electronics. Its capability to quickly switch between bipolar and unipolar output signals make it well-suited for switching between different modes, such as on/off, intensity control, speed control, and wireless communication.

The PDTC144VM,315 is composed of three parts: a collector, an emitter, and a base. The collector is the part of the transistor to which DC current flows in, while the emitter is the part to which current flows out. The base serves as an input when connected to a voltage or current source and controls the amount of current that passes through the collector and emitter. The pre-biased feature of the PDTC144VM,315 means it is connected to a DC input voltage when it is powered on. This allows a more efficient circuit setup and reduces consumed power by bypassing the need for a dedicated startup circuit.

The PDTC144VM,315 has a voltage gain of 138, meaning that it can amplify voltages between 0.15 V and 5.5 V. It can handle a maximum collector current of about 500 mA and maximum collector-emitter voltage of 30 V. The device has a low leakage current, allowing it to stay in a standby state without consuming too much power. The PDTC144VM,315 also has a wide operating temperature range of -55 °C to +125 °C, making it suitable for many industrial applications.

The PDTC144VM,315 can be used in various applications, including power management, motor control, frequency modulation, and switching. It can also be used in combination with other transistors to create a complex amplify or switch circuit. It can also be used to switch between different modes, such as on/off, intensity control, speed control, and wireless communication. The PDTC144VM,315 can be used as a general-purpose amplifier, switch, or buffer in many circuits. It has a wide variety of applications in consumer electronics and can also be used in robotics, medical equipment, and other industrial applications.

The working principle of the PDTC144VM,315 is similar to that of any other BJT. It is driven by an input voltage or current, which increases the conductivity of the base. When the emitter-base junction of the transistor is forward biased, current flows through it, allowing current to pass through the collector-emitter junction. This current can then be amplified, switched, or buffered according to the circuit setup. The same principle applies to transistors of other classes such as insulated gate bipolar transistors (IGBTs).

In summary, the PDTC144VM,315 is a single pre-biased bipolar junction transistor (BJT). Its capability to quickly switch between bipolar and unipolar output signals makes it ideal for applications such as power management, motor control, frequency modulation, and switching. It has a voltage gain of 138 and can handle a maximum collector current of about 500 mA and maximum collector-emitter voltage of 30 V. Its wide operating temperature range of -55 °C to +125 °C and low leakage current make it ideal for many industrial applications. The working principle of the PDTC144VM,315 is the same as that of any other BJT, driven by an input voltage or current which increases the conductivity of the base.

The specific data is subject to PDF, and the above content is for reference

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