PDTC144VU,115 Allicdata Electronics
Allicdata Part #:

PDTC144VU,115-ND

Manufacturer Part#:

PDTC144VU,115

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC144VU,115 datasheetPDTC144VU,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.01990
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: PDTC144
Description

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The PDTC144VU,115 is a Single, Pre-Biased Transistor, specifically a Bipolar Junction Transistor (BJT). It is a four-layer PNP transistor with a built-in bias resistor. This allows a lower supply voltage and simplified design. The device has an emitter current of 115mA, with a peak current rating of 1A.

The PDTC144VU,115 has a wide range of application fields, including motor drivers, automotive applications, and industrial control equipment. It is used in circuits such as H-bridge drivers, DC/DC converters, and other switching and control designs. In automotive applications, it is used to drive solenoid valves and LED displays. In industrial control equipment, it is used to switch high voltage loads such as heating and cooling elements.

The working principle of the PDTC144VU,115 is based on the 4-layer PNP transistor structure. The emitter is connected to the DC supply voltage, while the base and collector are connected to ground. The emitter current flows through the emitter-base junction, generating a voltage drop and a diode-like behavior. The collector current is then controlled by the base voltage. The result is a transistor with a controlled current gain, which serves as the basic switching element in many circuits.

When the base voltage is increased above the emitter voltage, the transistor turns on and the collector current increases, quickly reaching a level determined by the emitter current. At the same time, the transistor biases the collector-emitter junction, forming a path for current to flow in the opposite direction, thus allowing for both PNP and NPN operation. The bias resistor built into the PDTC144VU,115 allows for a lower supply voltage and simplified circuitry, making it suitable for use in various applications.

The flexibility and high performance of the PDTC144VU,115 make it an attractive solution for motor drivers, automotive applications, and industrial control equipment. The low supply voltage requirements and built-in bias resistor make it easy to design and implement, while the reliable and dependable performance ensures that your application will continue to operate correctly. Moreover, the device is available in a variety of packages, making it ideal for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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