PDTC144WMB,315 Allicdata Electronics
Allicdata Part #:

PDTC144WMB,315-ND

Manufacturer Part#:

PDTC144WMB,315

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 250MW 3DFN
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC144WMB,315 datasheetPDTC144WMB,315 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.05332
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Base Part Number: PDTC144
Supplier Device Package: 3-DFN1006B (0.6x1)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: 230MHz
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PDTC144WMB,315 is a single, pre-biased transistor, classified as a bipolar junction transistor (BJT). As such, it is a three-layer solid-state device consisting of two PN junctions between two types of semiconductor materials. It is commonly used as a switch or amplifier.Pre-biasing of the PDTC144WMB,315 is achieved by providing a bias voltage to the collector terminal, allowing a small current to flow even with no base-emitter voltage, thus eliminating the need for a separate bias network. This is useful when multiple transistors are in use, as it eliminates the need for individual bias networks for each transistor.The PDTC144WMB,315 is suitable for use in a wide range of applications. Its pre-biasing feature makes it well-suited for use in phase shift oscillators, where a single bias voltage can be applied to multiple transistors. It is also widely used as a switching amplifier in high-speed communications applications which require low power dissipation. In addition, its low cost and high reliability make it attractive for automotive, appliance, and consumer products requiring cost and performance advantages.The PDTC144WMB,315 has a maximum collector current of 120 mA, with a maximum collector-emitter voltage of 40 V. It has a very low saturation voltage (VCE sat) of 0.40V, making it ideal for low voltage applications. The maximum base-emitter voltage (VBE) is 4.3V, and the linear current gain (β) is approximately 18.0, which is quite large for a low-power transistors. It also has a very high voltage gain, making it suitable for use in a variety of circuits as an amplifier as well as a switch.The working principle of the PDTC144WMB,315 is fairly simple. When a small base current (IB) is fed into the base terminal of the transistor, it allows the collector current (IC) to flow. This allows the transistor to be used as a switch, with the base controlling the on/off state of the transistor. The collector voltage (VC) is determined by the characterisitcs of the transistor, and the base-emitter voltage (VE) is determined by the bias voltage provided to the collector terminal.In summary, the PDTC144WMB,315 is a single, pre-biased transistor, classified as a bipolar junction transistor (BJT). It is commonly used as a switch or amplifier, due to its low VCE sat, high β, and high voltage gain. It is suitable for a wide range of applications, such as phase shift oscillators, high speed communications, automotive, appliance, and consumer products. Its working principle is quite simple, with the base current controlling the on/off state, and the bias voltage determining the base-emitter voltage.

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