Allicdata Part #: | 1727-1704-2-ND |
Manufacturer Part#: |
PDTC115ET,215 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 250MW TO236AB |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC115ET,215 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.01990 |
6000 +: | $ 0.01796 |
15000 +: | $ 0.01561 |
30000 +: | $ 0.01405 |
75000 +: | $ 0.01249 |
150000 +: | $ 0.01041 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 20mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | PDTC115 |
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Bipolar junction transistors, or BJTs, are three-terminal active semiconductor devices primarily used in amplifying or switching applications. Among the most commonly used types of BJTs, the single, pre-biased PDTC115ET and 215 are well-suited for a variety of switching and amplifier tasks. In this article, we will discuss these two transistors\' prevalent application fields and their working principle.
Application Fields
The PDTC115ET and 215 transistors are primarily utilized as switches in a variety of applications. An especially popular application of their pre-bias circuit is the switching of digital signals, such as 4–20 mA current loop systems. They are also used in low current digital circuits, including the control circuit of a solid state relay.
Apart from the above, these transistors can also serve as basic amplifiers. Their range of operation is especially well-suited in processes where analog input signals are to be converted into a digital output. An example of this is the use of PDTC transistors as rectifier diodes in circuits with a single-ended output signal.
Working Principle
The primary component of any BJT is the base-collector junction, which is responsible for amplifying or switching currents. The PDTC115ET and 215 transistors feature several differences between them, both operationally and electrically, that make them well-suited for their various applications.
The selective gain of the PDTC115ET is slightly higher than that of the 215, making it the better choice for applications that require greater amplification. Similarly, the PDTC115ET offers a much lower power supply voltage than its counterpart, making it suitable for operations in which the power draw is expected to be minimal. Additionally, the PDTC115ET has a much higher switching speed than the 215.
Both the PDTC115ET and 215 transistors feature a low-driven collector-emitter voltage and low gate capacitance, making them extremely reliable and efficient when used in their intended application fields. Their built-in resistors, both emitter and base, play a pivotal role in stabilizing the circuit and controlling the current. Additionally, they provide a thermal cut-off to the circuit in the event of an overload.
In conclusion, the PDTC115ET and 215 transistors are versatile components and can be utilized in both switching and amplifying applications. Their pre-bias circuit, along with their low current draw, makes them ideal for digital operations, while their switching speed, gain, and resistance make them appropriate for amplifier operations.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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