| Allicdata Part #: | PDTC143ES,126-ND |
| Manufacturer Part#: |
PDTC143ES,126 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | TRANS PREBIAS NPN 500MW TO92-3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: | PDTC143ES,126 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Obsolete |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 4.7 kOhms |
| Resistor - Emitter Base (R2): | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max): | 1µA |
| Power - Max: | 500mW |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92-3 |
| Base Part Number: | DTC143 |
Description
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PDTC143ES,126 application field and its working principle
The PDTC143ES,126 is a type of bipolar junction transistor (BJT). BJTs are made up of two PN (positive and negative) junctions placed back to back. These two junctions form a semiconductor switch, allowing current to pass through if a certain voltage is applied. In this way, BJT transistors can be used to control the flow of current in electronic circuits.Furthermore, the PDTC143ES,126 is a pre-biased single transistor. Pre-biased transistors are designed to turn a power device on and off quickly and efficiently, through the application of a small current or voltage on the base of the transistor. This helps reduce power loss and enable faster switching times.The PDTC143ES,126 is typically used in the field of automotive electronics. It is often included in car ignition systems, as it is able to sense when the vehicle\'s key is inserted in the ignition and automatically turn the car on. In addition, the PDTC143ES,126 can be applied in other types of systems that require fast activation or deactivation.The PDTC143ES,126 working principle is based on the voltage drop created by a forward-biased PN junction. When this voltage drop is applied to the base of the transistor, it causes the transistor to turn on, allowing the current to flow from the collector to the emitter. In order to turn the transistor off again, the current or voltage applied to the base of the transistor must be removed or reduced.The PDTC143ES,126 also has several other important characteristics that make it suitable for use in automotive electronics. It has a high current carrying capacity, low saturation voltage, and low thermal impedance, which makes it a reliable and efficient switching device.The PDTC143ES,126 is a popular choice for automotive applications due to its small package size and high switching speed. It is available in a wide variety of voltage and power ratings, making it suitable for a wide range of automotive applications. In addition, the PDTC143ES,126 has a fast turn-on time, allowing for faster circuit activation and increased system efficiency.In conclusion, the PDTC143ES,126 is a pre-biased single transistor that is commonly used in the field of automotive electronics. It has a high current carrying capacity, low saturation voltage, and low thermal impedance, which makes it a reliable and efficient switching device. Furthermore, it can quickly and reliably turn on and off a power device, reducing power loss and enabling faster switching times.The specific data is subject to PDF, and the above content is for reference
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PDTC143ES,126 Datasheet/PDF