PDTC114ET/DG/B2,21

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PDTC114ET/DG/B2,21 is a single, pre-biased bipolar junction transistors (BJT) device, commonly used in various applications requiring amplification and switching. The device is considered pre-biased because it is biased away from the linear region (cutoff or saturation) when it is first turned on and requires only a small adjustment to the base current to adjust the common collector current.

The PDTC114ET/DG/B2,21 can be used to add current gain in small-signal amplifier circuits and as a switch, either directly or in a high efficiency current gain switch circuit. It is widely used as an audio-frequency power amplifier, as well as in radio frequency (RF) and intermediate frequency (IF) amplifiers. The PDTC114ET/DG/B2,21 is manufactured in several package styles and is available in various ratings, such as voltage, current and power.

The working principle of a PDTC114ET/DG/B2,21 Bipolar Junction Transistor (BJT) is based on two important physical phenomena - charge carrier generation and charge carrier movement:

When a small electric current is applied to the base-emitter junction of the transistor, electrons and holes are generated in proportion to the applied current. This process is known as "charge carrier generation". These electrons and holes move towards opposite junction sides. This is known as "charge carrier movement".

When the base-emitter junction is forward biased (positive voltage on the emitter junction), the electrons move toward the emitter while the holes move toward the base. This means that electrons are drawn away from the base and there is a corresponding decrease in the electrons present in the base-emitter junction. This decrease in the number of electrons in the base-emitter junction causes current to flow through the base and collector of the transistor, resulting in an amplified current gain between emitter and collector.

The PDTC114ET/DG/B2,21 is a pre-biased bipolar junction transistor, which means that it is biased to a point where it is not in either the cut-off or saturation (linear) regions when it is first used. This type of transistor is able to operate faster than other BJTs, as the bias level does not need to be adjusted. It is also more reliable, as it does not require complex circuitry for bias control.

The PDTC114ET/DG/B2,21 is used primarily in audio-frequency power amplifiers, as well as in RF and IF amplifiers. It can also be used as a switch, either directly or in a high efficiency switch circuit, and can be used to provide current gain in small-signal amplifier circuits. Because of its pre-biased nature, the PDTC114ET/DG/B2,21 requires less adjustment when being used, and thus is considered very reliable.

The specific data is subject to PDF, and the above content is for reference