PDTC144EU,135 Allicdata Electronics
Allicdata Part #:

PDTC144EU,135-ND

Manufacturer Part#:

PDTC144EU,135

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC144EU,135 datasheetPDTC144EU,135 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
10000 +: $ 0.01561
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: PDTC144
Description

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The PDTC144EU and the PDTC135 are pre-biased, single bipolar transistors (BJTs). Bipolar transistors (BJT) are three-terminal active semiconductor devices with two distinct current carrying regions that regulate the flow of electrons from the emitter terminal to the collector terminal. The BJT uses the current flowing from the collector to the base as the control signal, modulating the current flowing from the emitter to the collector. This type of transistor is designed to withstand a large amount of current, while providing a low forward voltage drop in both the NPN and PNP configurations.

The PDTC144EU and the PDTC135 possess a variety of features and are used for a variety of applications. Both transistors have a low current gain (beta or hfe) of 15 and use an NPN type of bipolar transistor. Both devices offer an extremely low on-state voltage drop (Vce) of only 0.11V, which enables them to be used in supplying highly efficient power solutions. Furthermore, they have a wide voltage range ranging from 60V to 175V and can operate in a variety of frequencies. Both transistors also have an extraordinarily low leakage current and a maximum power dissipation of 500mW.

These transistors have a variety of application fields, such as computer power supplies, voltage regulators, DC/DC converters, switching power supplies, converters, and other power management circuits. Due to their high quality, efficient power solutions, they are also commonly used in automotive, telecommunication, and aerospace applications.

As for the working principle, these transistors are based on the common-base current amplifying principle. Both the PDTC144EU and the PDTC135 are two-stage amplifiers using two NPN transistors connected in common-base configuration with an emitter resistor. Current from the base terminal is amplified by the two transistors, and the amplified output signal is fed to the resistor. The resistance of the resistor forms a voltage divider that assists in controlling the current and voltage levels of the output signal. The output signal is then fed to the collector, which then amplifies the input current.

In conclusion, the PDTC144EU and the PDTC135 are two pre-biased, single bipolar transistors (BJTs) with a variety of features that make them useful in a wide range of applications. Both transistors have an extremely low forward voltage drop and offer an array of efficient power solutions, making them ideal for computer power supplies, voltage regulators, DC/DC converters, and other power management circuits. Furthermore, they utilize a common-base current amplifying principle to regulate and control the current and voltage levels of their output signal.

The specific data is subject to PDF, and the above content is for reference

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