PDTC114EU,115 Allicdata Electronics

PDTC114EU,115 Discrete Semiconductor Products

Allicdata Part #:

1727-5132-2-ND

Manufacturer Part#:

PDTC114EU,115

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC114EU,115 datasheetPDTC114EU,115 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
3000 +: $ 0.01990
6000 +: $ 0.01796
15000 +: $ 0.01561
30000 +: $ 0.01405
75000 +: $ 0.01249
150000 +: $ 0.01041
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: PDTC114
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PDTC114EU,115 is part of a series of single-bipolar, pre-biased transistors. These transistor types are known for their fast switching characteristics and low power losses.

A Transistor is a three-layered semiconductor device consisting of a base, a collector and an emitter, which can control the current flow between two points. It works as a switch, controlling the amount of voltage that passes through the circuit. An NPN transistor has a positive (p) type base, negative (n) type collector, and negative (n) type emitter. A PNP transistor has a negative (n) type base, positive (p) type collector, and positive (p) type emitter.

A pre-biased transistor is one where the gate voltage (Vg) is already in place before the power is applied. This reduces the time required for the device to warm up. In some cases, the collector voltage can be adjusted to a different level, allowing the circuit to operate at a higher or lower currents than the nominal bias.

The PDTC114EU,115 is a NPN pre-biased transistor with a current gain of 250. It has a collector voltage range of 13-75 volts, a collector-emitter voltage (Vce) of 10-60 volts, and collector current (Ic) of 3-50 mA. The emitter-base voltage (Vbe) range is 4-8.5 volts, with the base-emitter voltage (Veb) range of 9-12 volts. The minimum operational frequency for this particular transistor is 5 MHz.

The PDTC114EU,115 has a variety of applications. It can be used as an amplifier, a signal switch, a current switch or as a current source. It is also suitable for use in switching power supplies, DC-DC converters, motor control, and other applications where fast switching and low power losses must be achieved.

In most applications, the PDTC114EU,115 is connected as a common emitter amplifier. In this configuration, the input signal is applied to the base, and the amplified signal is collected from the collector. The transistor works like a “pipe”, amplifying the input signal and transmitting it to the output circuit.

The bipolar pre-biased transistor is advantageous for its fast switching speed and low power losses. It is also well suited for use in circuits that require fast switching and low power losses. The PDTC114EU,115 is a reliable and reliable transistor type for many applications. It is available in a variety of packages and its performance meets the requirements of most applications.

The specific data is subject to PDF, and the above content is for reference

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