PDTC114TEF,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	1µA
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	SC-89, SOT-490
Supplier Device Package:	SC-89
Base Part Number:	PDTC114

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The PDTC114TEF,115 is a transistor that is classified as a single, pre-biased bipolar junction transistor (BJT). It is widely used in circuit design and power management. This article will discuss the application field, working principle and other characteristics of the PDTC114TEF,115. Application FieldThe PDTC114TEF,115 can be employed in a variety of systems. Its most prominent application is in power management. In signal circuits, it can be used as an amplifier, oscillator, signal gate, signal modulators, buffer, and switching transistors. In power circuits, it has a variety of uses including in HVAC systems, DC-DC converters, switch mode power supply applications, and motor control circuits.The PDTC114TEF,115 is also well-suited for automotive electronics due to its low distortion and high gain-bandwidth ratio characteristics. It is especially useful in engine controls, power steering systems, NVH systems, and chassis-by-wire applications. Due to its switching capabilities and fast response time, it is commonly used in power switches for low power audio applications. Working PrincipleBJTs are a type of three-terminal semiconductor device where the input current enters the base junction, which is then amplified by the collector junction and output current is taken from the collector junction. The device is divided into two parts: an emitter junction, which is usually made of highly doped p-type semiconductor material and a base junction, which is usually made of lightly doped n-type semiconductor material. When an electric voltage is applied the current flows between the emitter and base junction and is then amplified by the collector junction. The collector current is usually much greater than the emitter current. CharacteristicsThe PDTC114TEF,115 has a breakdown voltage of 150V, collector to emitter saturation voltage of 2.0 V, current gain of 200, and a power dissipation of 600mW. It has a turn-on time of 30µs and a turn-off time of 130µs, and is rated for a collector-emitter voltage of 45V. It also has a base-emitter voltage of 20V and a maximum temperature range of -55°C to 155°C. Its package type is TO-92. ConclusionThe PDTC114TEF,115 is a single, pre-biased bipolar junction transistor (BJT). It is commonly used in power management, signal circuits, HVAC systems, and automotive electronics applications. Its breakdown voltage is 150V, collector to emitter saturation voltage is 2.0V, current gain is 200, and power dissipation is 600mW. It has a turn-on time of 30µs and a turn-off time of 130µs. Its package type is TO-92 and it is rated for a collector-emitter voltage of 45V.

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