PDTC114YQAZ Allicdata Electronics
Allicdata Part #:

PDTC114YQAZ-ND

Manufacturer Part#:

PDTC114YQAZ

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 3DFN
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC114YQAZ datasheetPDTC114YQAZ Datasheet/PDF
Quantity: 1000
5000 +: $ 0.02514
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz
Power - Max: 280mW
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3
Description

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Transistors are devices that are designed to control the flow of electricity. They are used in a variety of electronic applications, from home appliances to computers and communication systems. One type of transistor is the single, pre-biased bipolar junction transistor (BJT), also known as the PDTC114YQAZ. This article will discuss the application field as well as the working principle of the PDTC114YQAZ.

The PDTC114YQAZ is a pre-biased BJT, which means that it is specifically designed to operate at a predetermined bias voltage. It is used when it is necessary to provide a more consistent and efficient control of current flow, particularly in applications requiring higher power dissipation. This transistor can also be used in amplifier circuits, as well as in switching circuits, as it has a wide operating voltage range. The PDTC114YQAZ has a maximum collector-emitter voltage (Vce) of 80 volts, a maximum collector current (Ic) of 150 milliamperes (mA), and a maximum power dissipation (Pd) of 500 milliwatts (mW).

To understand how the PDTC114YQAZ works, it is first necessary to understand the fundamental structure, or layout, of a basic BJT. A BJT is composed of three regions: the base, collector, and emitter. The base acts as an input, in that it controls the current flowing from the collector to the emitter. The collector-emitter voltage (Vce) must remain above the specified minimum in order for the device to remain active.

When the PDTC114YQAZ is operated, the base must be placed at the appropriate bias voltage first. This sets the device\'s operating point, meaning that it is specified for certain types of current and voltage conditions. Once the bias voltage is established, the device\'s transistors will turn on or off in response to the input (base) voltage. When the base voltage rises above the bias voltage, current will be allowed to flow from the collector to the emitter. When the base voltage falls below the bias voltage, no current will be allowed to flow.

Once the current is allowed to flow, the collector-emitter voltage (Vce) plays an important role in determining the device\'s performance. When the Vce is at or above the maximum specified by the manufacturer, the device is said to be in saturation. At this point, the device will have the highest current-to-voltage ratio, and the power dissipation will be at its highest. In other words, the PDTC114YQAZ is most efficient when it is driven into saturation.

The PDTC114YQAZ is an extremely versatile device, as it can be used in a variety of applications. It is commonly used for power switching, voltage regulation, amplifier circuits, and other specialized circuits. It is an ideal choice for applications requiring higher power dissipation and more consistent and efficient current flow control.

In conclusion, the PDTC114YQAZ is a single, pre-biased BJT, used when it is necessary to provide a more consistent and efficient control of current flow. It has a wide operating voltage range, and it is most efficient when operated in saturation. It is an ideal choice for applications requiring higher power dissipation and more consistent and efficient current flow control.

The specific data is subject to PDF, and the above content is for reference

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