PDTC114YTVL Allicdata Electronics
Allicdata Part #:

PDTC114YTVL-ND

Manufacturer Part#:

PDTC114YTVL

Price: $ 0.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: PDTC114YT/SOT23/TO-236AB
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC114YTVL datasheetPDTC114YTVL Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01561
Stock 1000Can Ship Immediately
$ 0.01
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Description

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PDTC114YTVL application field and working principle

The PDTC114YTVL is a single, pre-biased, bipolar (BJT) transistor. Transistors in this family are used for their high current, low saturation voltage and current gain capabilities, as well as their excellent thermal resistance. They are commonly found in a wide array of circuits and applications, including power supplies, inverters, amplifiers, switching circuits, phase-locked loops, analog-to-digital circuits, voltage regulators, and more.

The PDTC114YTVL is composed of three parts: the emitter, base, and collector. Emitters are the leads that allow for current flow from the base to the collector. The base is the Junction, where the majority of current flows. The collector is the lead that allows for the current to be conducted from the base to the emitter. Each collector has its own individual current gain, which helps to regulate the amount of current that is conducted.

The PDTC114YTVL is a pre-biased transistor device, meaning that the current gain (or "beta") is determined prior to the transistor being used in a circuit. This is usually done by adjusting the electrical field between the base junction and emitter. The Major advantage of this device is that it allows for more accurate control of the current flow between the base and collector.

The working principle of the PDTC114YTVL is based on the bipolar junction transistor (BJT) operating principle. A BJT is composed of three layers. The first layer is a positive layer and is known as the base. The second layer is a negative layer and is known as the emitter. The third layer is a conducting layer and is known as the collector. When current is applied to the base, it is pulled towards the emitter connected to a positive voltage. This positive voltage is supplied from the collector.

Once the base current is increased, it generates an amplified voltage differential between the base and emitter. This amplified voltage differential allows for more current to flow from the collector to the emitter, which is then conducted out of the emitter. This amplified current flow allows for more current than what is applied to the base, which is the basis of a transistor\'s current gain.

The PDTC114YTVL has excellent current gain capabilities, due to its high collector-base voltage breakdown and low saturation voltage. This allows for higher input signals to be amplified more accurately, without resulting to distortion. In addition, it has excellent thermal performance, allowing for higher levels of current to be conducted without the risk of overheating.

Applications for the PDTC114YTVL differ depending on the circuit, but is commonly found in power supplies, inverters, amplifiers, switching circuits, phase-locked loops, analog-to-digital circuits, voltage regulators, and more. It can also be used in audio amplifiers and radio receivers. The having a very low voltage drop between the collector and base, and its low power consumption makes it suitable for a wide range of portable and low-power applications.

Overall, the PDTC114YTVL is a single, pre-biased, bipolar (BJT) transistor. This device is widely used due to its excellent current gain, high current, low saturation voltage and excellent thermal resistance. It is used in a variety of applications, including power supplies, inverters, amplifiers, switching circuits, phase-locked loops, analog-to-digital circuits, voltage regulators, audio amplifiers, and radio receivers. It\'s also good for portable and low-power applications due to its low voltage drop and power consumption.

The specific data is subject to PDF, and the above content is for reference

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