PDTC115EMB,315 Allicdata Electronics
Allicdata Part #:

PDTC115EMB,315-ND

Manufacturer Part#:

PDTC115EMB,315

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 250MW 3DFN
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC115EMB,315 datasheetPDTC115EMB,315 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.05332
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Base Part Number: PDTC115
Supplier Device Package: 3-DFN1006B (0.6x1)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: 230MHz
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 20mA
Transistor Type: NPN - Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Bipolar junction transistors (BJTs) are widely used in many kinds of circuits, and there is a great variety of them to serve different purposes. One type is the single, pre-biased BJT, such as the PDTC115EMB. This type of transistor has several applications and a working principle that make it a go-to part for many designs.

The main application of this type of transistor is in power-switching circuits. It can be used to provide switching between two different power sources, or to drive a load such as a motor, relay, or LED. The transistor can also be used in astable multivibrator circuits, and as part of switching logic circuits. In addition, it can be used as a linear amplifier, voltage regulator, and in many other applications.

The working principle of this kind of transistor is based on a current-controlled current flow. Essentially, the current between the base and the emitter is controlled by the voltage between the base and the collector. When the base voltage is increased, the current between the emitter and the base is increased, and the current between the emitter and the collector is decreased. This process is known as base-induced gain control.

The PDTC115EMB is one type of single, pre-biased BJT. It is manufactured by Paratek, and is loaded with numerous features, such as: high voltage performance up to 700 volts, low saturation voltage drop of 3 volts, low on-state power rating of 3 watts, and an enable/disable pin for easy control. The device is rated for a total power dissipation of 40 watts, and can handle power up to 150 volts. It also has an over temperature protection circuit, with a temperature coefficient of 0.5%.

The PDTC115EMB is a highly versatile and reliable transistor that is suitable for many kinds of applications. It has a wide range of features, and provides a robust and reliable performance in power-switching circuits, astable multivibrator circuits, and many other circuits. With its high voltage performance, low saturation voltage drop, and low on-state power rating, the PDTC115EMB is sure to be a favorable solution for many designs.

The specific data is subject to PDF, and the above content is for reference

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