Allicdata Part #: | PDTC115EMB,315-ND |
Manufacturer Part#: |
PDTC115EMB,315 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 250MW 3DFN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC115EMB,315 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05332 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 5V |
Base Part Number: | PDTC115 |
Supplier Device Package: | 3-DFN1006B (0.6x1) |
Package / Case: | 3-XFDFN |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | 230MHz |
Current - Collector Cutoff (Max): | 1µA |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 100 kOhms |
Resistor - Base (R1): | 100 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 20mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Bipolar junction transistors (BJTs) are widely used in many kinds of circuits, and there is a great variety of them to serve different purposes. One type is the single, pre-biased BJT, such as the PDTC115EMB. This type of transistor has several applications and a working principle that make it a go-to part for many designs.
The main application of this type of transistor is in power-switching circuits. It can be used to provide switching between two different power sources, or to drive a load such as a motor, relay, or LED. The transistor can also be used in astable multivibrator circuits, and as part of switching logic circuits. In addition, it can be used as a linear amplifier, voltage regulator, and in many other applications.
The working principle of this kind of transistor is based on a current-controlled current flow. Essentially, the current between the base and the emitter is controlled by the voltage between the base and the collector. When the base voltage is increased, the current between the emitter and the base is increased, and the current between the emitter and the collector is decreased. This process is known as base-induced gain control.
The PDTC115EMB is one type of single, pre-biased BJT. It is manufactured by Paratek, and is loaded with numerous features, such as: high voltage performance up to 700 volts, low saturation voltage drop of 3 volts, low on-state power rating of 3 watts, and an enable/disable pin for easy control. The device is rated for a total power dissipation of 40 watts, and can handle power up to 150 volts. It also has an over temperature protection circuit, with a temperature coefficient of 0.5%.
The PDTC115EMB is a highly versatile and reliable transistor that is suitable for many kinds of applications. It has a wide range of features, and provides a robust and reliable performance in power-switching circuits, astable multivibrator circuits, and many other circuits. With its high voltage performance, low saturation voltage drop, and low on-state power rating, the PDTC115EMB is sure to be a favorable solution for many designs.
The specific data is subject to PDF, and the above content is for reference
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