PDTC123TU,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	1µA
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323-3
Base Part Number:	PDTC123

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Introduction to PDTC123TU,115 Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistors are among the most versatile components in the world of electronics and are used in a wide range of applications. The PDTC123TU, 115 transistor is one such component which is available in the family of single pre-biased transistors in the form of a bipolar junction transistor (BJT). In this article, we will explore the application fields and working principle of the PDTC123TU,115 transistor.

Application Fields of the PDTC123TU,115

The PDTC123TU,115 is a commonly used transistor whose application fields range from amplifiers and oscillators to power switching circuits. It is a high-voltage, high-speed transistor and is used in many digital and analog circuits. In terms of amplifiers, the PDTC123TU, 115 transistor is used as a low-noise preamplifier. It is particularly useful in low-frequency applications, as it has a low input capacitance and low noise figure.The PDTC123TU,115 is also widely used in oscillators. Oscillators are electronic circuits that generate a periodic signal, and transistors such as the PDTC123TU,115 form the active element of these circuits. The PDTC123TU,115 is ideal for oscillators as it has a high gain and a low noise factor.Finally, the PDTC123TU,115 is also used in power switching circuits. The device has a low on-resistance which makes it suitable for power switching applications. The PDTC123TU,115 can also be found in protection circuits, as it has a low on-state voltage drop and can withstand large voltage and current surge.

Working Principle of the PDTC123TU,115

The PDTC123TU,115 is classified as a pre-biased bipolar junction transistor (BJT). The device is constructed with three terminals stemming from the collector, base and emitter electrodes. The device is considered to be pre-biased because the base and collector electrodes are already at a potential when the device is powered up.The operation of a BJT relies on the action of two P-N junctions which are formed by two back-to-back diodes. The BJT is an amplifier because it can take a small signal at the base and amplify it to a larger signal at the collector. The gain of the transistor is determined by the ratio of the collector current to the base current and is referred to as the current gain.The gain of the PDTC123TU,115 transistor is adjustable by adjusting the bias voltage applied to the base and collector electrodes. The transistor also has a low on-resistance, which makes it useful for power switching applications.

Conclusion

The PDTC123TU,115 is a versatile pre-biased transistor in the family of single bipolar junction transistors (BJT). The device has a wide range of applications which include amplifiers, oscillators and power switching circuits. The transistor can also be used in protection circuits, as it has a low on-state voltage drop and can withstand large voltage and current surges. The operation of the PDTC123TU,115 relies on two P-N junctions which form a back-to-back diode, and the device has a low on-resistance which makes it suitable for power switching applications.

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