PDTC123YU,115 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1708-2-ND |
Manufacturer Part#: |
PDTC123YU,115 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 200MW SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC123YU,115 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.01990 |
6000 +: | $ 0.01796 |
15000 +: | $ 0.01561 |
30000 +: | $ 0.01405 |
75000 +: | $ 0.01249 |
150000 +: | $ 0.01041 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Base Part Number: | PDTC123 |
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The PDTC123YU 115 is a pre-biased, single, bipolar transistor developed by PDTC Devices. This transistor is among the most popular transistors used in a variety of electronics applications. It can be used to control the flow of current or to modulate signals in many different kinds of circuits. The PDTC123YU 115 has a robust construction which ensures reliable performance and long life.
The PDTC123YU 115 has a collector-emitter voltage rating of 3.0V and a collector-base voltage rating of 5.0V. It has a maximum collector current rating of 100mA and a maximum collector power dissipation rating of 500mW. Additionally, it has a minimum gain bandwidth product of 150MHz and a maximum gain of 500. This makes it ideal for a wide range of applications.
The PDTC123YU 115 is used primarily in logic level switching applications, amplifiers, and general purpose switches. It can also be used in more advanced circuits such as frequency multipliers and active filters. When connected in circuits, the PDTC123YU 115 operates in either the cut-off or saturation modes. In cut-off mode, the transistor acts as an open circuit and no current flows. In saturation mode, enough voltage is applied to the base-emitter junction to turn on the transistor and cause current to flow through it.
The PDTC123YU 115 is constructed using a PN junctions which are formed by dopant diffusion in the N and P type semiconductor materials. This creates an electric field in the depletion layer which is used to control the current flow across the transistor. The electric field is generated by applying a voltage to the gate. When a voltage is applied to the gate electrode, it modulates the electric field, allowing current to flow through the transistor.
The PDTC123YU 115 has many advantages over other transistors such as low power consumption and low noise. It also offers good switching capability and high frequency response, making it suitable for many different applications. Additionally, it has a high collector-base voltage rating, which makes it more resistant to breakdown due to high voltage overloads. Furthermore, the PDTC123YU 115 is capable of withstanding high temperature environments.
In conclusion, the PDTC123YU 115 is a versatile, pre-biased, single, bipolar transistor which is suitable for use in many types of applications. Its robust construction and excellent switching capability make it an ideal choice for many different electronics projects. Additionally, its low power consumption, low noise, and high frequency response make it a great choice for those who want to maximize their performance.
The specific data is subject to PDF, and the above content is for reference
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