PDTC124TM,315

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	1µA
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	SC-101, SOT-883
Supplier Device Package:	DFN1006-3
Base Part Number:	PDTC124

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The PDTC124TM,315 is a single pre-biased bipolar junction transistor (BJT) that offers superior performance in both backlighting and industrial application fields. It features robust drive capabilities, improved switching time and minimized losses thanks to its high-performance design. This article explores the application field and working principle of the PDTC124TM,315 along with its advantages and technical specifications.Applications and AdvantagesThe PDTC124TM,315 is primarily used in industrial applications, specifically backlighting and power management control in low-power LCDs. Its superior performance and reliability make it ideal for such applications due to its high-performance design.The PDTC124TM,315 offers a number of advantages over conventional BJTs. It has a higher thermal stability, improved switching speed, and better device tightness. Additionally, its advanced gate structure reduces losses up to 20% and its superior drive capability allows for higher drive performance. The device also has a low turn-on voltage and high forward current capacity.Working PrincipleThe PDTC124TM,315 is classified as a single pre-biased bipolar junction transistor, which means that it comes pre-biased, meaning it is already in the "on" state, and features a four-layer design with a base and collector in the middle and an emitter on each side. It is manufactured using an advanced, industry-leading process which ensures that it has superior performance and reliability.When the base current is supplied, it causes electrons to flow into the base, creating a current that courses through the emitter-base junction. This causes a minority carrier to collect in the collector, and when enough current is provided, the collector-emitter current begins to flow. Through the collector and base connection, the device can be either switched on (in the “on” state) or switched off (in the “off” state).Technical SpecificationsThe PDTC124TM,315 offers a variety of technical specifications that make it suitable for backlighting and industrial applications. The device has a collector-emitter voltage (Vce) of -100V, a collector current of -100mA, an emitter-base voltage of 10V, and a maximum power dissipation of 1.0W at 70°C. Additionally, it has a maximum operating temperature of 175°C and a storage temperature range of -55°C to +175°C.ConclusionThe PDTC124TM,315 is a single pre-biased bipolar junction transistor that is highly suitable for applications in backlighting and industrial applications. Its superior performance and reliability makes it an ideal choice for low-power LCD backlighting and power management control. It features a high thermal stability, improved switching speed, advanced gate structure, low turn-on voltage and high forward current capacity. The device also comes with a variety of technical specifications that make it suitable for backlighting and industrial applications, including a collector-emitter voltage (Vce) of -100V, a collector current of -100mA, an emitter-base voltage of 10V, and a maximum power dissipation of 1.0W at 70°C.

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