
Allicdata Part #: | 568-2163-2-ND |
Manufacturer Part#: |
PDTC143XEF,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PREBIAS NPN 250MW SC89 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SC-89 |
Base Part Number: | DTC143 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PDTC143XEF,115 is a single, pre-biased, bipolar junction transistor (BJT) that is ideally suited for automotive and industrial applications. The device has a wide variety of uses and can be found in a variety of applications such as motor control, lighting control, pulse width modulation, and power switch. The PDTC143XEF,115 can also be used in sensing applications and can be found in a variety of embedded systems.
The PDTC143XEF,115 is highly reliable and can withstand extreme temperatures and environmental conditions. The device features a number of features, including a high breakdown voltage, high thermal stability, high current gain, and low thermal resistance. The device is also capable of handling high frequencies and can be used in applications with high power requirements.
The PDTC143XEF, 115 is a three-terminal device with one NPN type collector and two PNP type emitter of varying size. The emitter is the interface between the collector and the base and is responsible for controlling the flow of current between them. The operation of the device is based on the two voltages that are supplied to the collector and emitter, the base current and the collector to emitter voltage.
The device is normally prefabricated, so the user does not need to assemble it but only requires a few jumper and resistor network configurations to get the device working properly. The device is often supplied with a collector and an emitter bias, which allows the user to easily adjust the operation of the device. The device is designed for both single-ended and dual-ended applications.
A pre-biased transistor is often used in applications that require a low power supply and high power efficiency. The device operates with the base bias between the collector and the emitter and utilizes the collector and the emitter to control the direction of the current. This enables the user to control the flow of current and allows the user to conserve power and increase efficiency.
The device also has a wide range of operating temperatures and can operate across a range of -65 to +125°C. This allows the user to use the device in a variety of industrial and automotive applications. The PDTC143XEF, 115 is highly reliable and can be used in a variety of environments.
When using the PDTC143XEF, 115 it is important to be mindful of the device\'s maximum power dissipation and thermal resistance. The device should never be used in applications that exceed its maximum power dissipation or the device may become damaged and fail. Additionally, the device should not be used in environments that are too hot, as the device may overheat and potentially be damaged.
In conclusion, the PDTC143XEF,115 is a single, pre-biased, bipolar junction transistor (BJT) that is ideal for automotive and industrial applications. The device is highly reliable and can withstand extreme temperatures and environmental conditions. Additionally, the device is capable of operating at high frequencies, conserving power, and increasing efficiency. The device should be used within its maximum power dissipation and should not be used in environments that are too hot.
The specific data is subject to PDF, and the above content is for reference
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