Allicdata Part #: | PDTC143ZQAZ-ND |
Manufacturer Part#: |
PDTC143ZQAZ |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 3DFN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC143ZQAZ Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.02514 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | 230MHz |
Power - Max: | 280mW |
Mounting Type: | Surface Mount |
Package / Case: | 3-XDFN Exposed Pad |
Supplier Device Package: | DFN1010D-3 |
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PDTC143ZQAZ is a type of transistors, called bipolar junction transistors (BJTs). It is a single pre-biased type, which means the structure and process of manufacture has already been optimized for a specific working point.
A bipolar junction transistor is a type of transistor that uses both electrons and holes as charge carriers. In its simplest form, an npn bipolar junction transistor consists of three layers of semiconductor material, usually silicon or germanium, placed in a single chip. The inner layer, known as the base, is normally positively biased and acts to control the current flowing between the collector (outer conductor) and the emitter (inner conductor).
The working principle of the PDTC143ZQAZ is based on the fact that when current flows through the base of a bipolar junction transistor, it increases the flow of charge carriers (electrons and holes) in the pairing direction. This, in turn, causes the current flow between the collector and the emitter to increase.
In terms of its application field, the PDTC143ZQAZ is ideal for audio, radio, telecommunications and high frequency circuit applications. It can be used to switch capacitance loads, switch analog signals, provide gain control in low voltage audio amplifiers and be used in low frequency AGC circuits.
Moreover, the PDTC143ZQAZ is also suitable for high frequency amplifiers, in which its relatively high Ft, combined with its low Icbo, enable a higher gain and increased signal power than a conventional transistor. In addition, the PDTC143ZQAZ can also be used in linear amplifier applications, such as high voltage power supplies, as a result of its lower saturation voltage.
Overall, the PDTC143ZQAZ is an ideal transistor for applications that require an optimized working point and require higher gain, higher signal and power, as well as lower saturation voltage. As a single pre-biased type, this transistor offers a range of advantages over traditional transistor types, including increased signal power, higher gain and lower saturation voltage. Therefore, it is a great choice for various applications.
The specific data is subject to PDF, and the above content is for reference
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