PEMD12,115 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-2155-2-ND |
Manufacturer Part#: |
PEMD12,115 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN/PNP SOT666 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | PEMD12,115 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.04479 |
8000 +: | $ 0.03895 |
12000 +: | $ 0.03311 |
28000 +: | $ 0.03116 |
100000 +: | $ 0.02590 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 5V |
Base Part Number: | MD12 |
Supplier Device Package: | SOT-666 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 300mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 1µA |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PEMD12,115 is a type of transistor array pre-biased used in many applications. It is made of high-grade plastic encapsulated dual-gate MOSFETs, and is used in various fields of electronics.
This transistor array pre-biased has two common-gate type outputs, which can be used in many analog and digital applications. It also has a wide operating temperature range from -55°C to +150°C, making it suitable for a variety of environments.
PEMD12,115 is an excellent choice for applications that require the highest possible performance and accuracy. It is ideal for applications such as audio pre-amplification, as it offers excellent noise performance, low distortion, and linearity. It can also be used for radio frequency (RF) communication, as it has a wide frequency range and has excellent linearity characteristics.
The working principle of the PEMD12,115 transistor array pre-biased is relatively simple. When a voltage is applied to the gate of the transistor array, the electrons are transferred from source to drain, allowing the current to flow through the transistor array. This flow of current is then used to drive the two common-gate outputs.
The PEMD12,115 is a superior device due to its superior noise immunity, low power consumption, low distortion, and fast switching times. This device is ideal for applications where the highest possible accuracy, linearity, and performance are required. It is also suitable for applications that require minimal losses and demand the highest system performance.
Due to the high performance and superior quality of the PEMD12,115, it is the ideal choice for applications that need a reliable, high-performance device that is reliable and of high quality. Additionally, this transistor array pre-biased is an excellent choice for situations where space is at a premium, as it has a small footprint and a low profile.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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PEMD16,115 | Nexperia USA... | 0.05 $ | 4000 | TRANS PREBIAS NPN/PNP SOT... |
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PEMD13,115 | Nexperia USA... | 0.05 $ | 1000 | TRANS PREBIAS NPN/PNP SOT... |
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