PEMD17,115 Allicdata Electronics
Allicdata Part #:

PEMD17,115-ND

Manufacturer Part#:

PEMD17,115

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN/PNP SOT666
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: PEMD17,115 datasheetPEMD17,115 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.04275
Stock 1000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Base Part Number: MD17
Supplier Device Package: SOT-666
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PEMD17,115 is a high performance, pre-biased bipolar transistor array designed for applications at frequencies of up to 100MHz. It is an eight-channel NPN array of transistors, featuring a low input capacitance and high gain bandwidth. This makes it suitable for use in audio frequency and radio frequency modulation, and for switching high current loads.

The PEMD17,115 is constructed from eight transistors, each bipolar junction transistor (BJT) of which has an independent base line, enabling independent current gain control for each element, increasing heat dissipation efficiency. This also improves the overall power efficiency of the array. The transistors are pre-biased meaning that their collector-emitter voltages and current gain levels are fixed, allowing for easier implementation in circuits.

PEMD17,115\'s wide array of features make it suitable for a variety of applications. It is suited for the amplification of low level signal inputs such as in amplifiers, microphones, and speakers. It is also suitable for signal switching, primarily in audio amplifier and power audio applications, and for signal modulation in radio broadcast and signal transmission applications. In all applications, the transistors can be used independently of one another and can be combined in multiple configurations.

The PEMD17,115\'s working principle relies on the injection and movement of electrons between two layers of doped silicon and a base layer of silicon. When a current is applied, the electrons travel from the source and cross over the base layer, travelling from the collector to the emitter. This process then allows holes to be injected into the emitter-collector junction and be swept out of the collector to form a current that passes across the devices.

With a low supply voltage of 5V and a gain bandwidth of 20MHz, the PEMD17,115 provides a reliable and efficient approach to driving current and producing audio or radio frequency signals. Its low power dissipation and low input capacitance capabilities make it a reliable and versatile transistor array for a variety of modulation and switching applications.

The PEMD17,115 is a versatile, reliable and efficient pre-biased bipolar transistor array for a variety of audio frequency and radio frequency modulation, switching and power audio applications. Its low supply voltage and high gain bandwidth make it ideal for low level signal amplification and the independent output transistors ensure power efficiency and heat dissipation efficiency. Its working principle is based on the injection of electrons between two layers of silicon and a base, allowing for holes to be injected and swept out of the collector to form a current.

The specific data is subject to PDF, and the above content is for reference

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