PEMD3,115 Allicdata Electronics

PEMD3,115 Discrete Semiconductor Products

Allicdata Part #:

1727-6490-2-ND

Manufacturer Part#:

PEMD3,115

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN/PNP SOT666
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: PEMD3,115 datasheetPEMD3,115 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.04275
8000 +: $ 0.03718
12000 +: $ 0.03160
28000 +: $ 0.02974
100000 +: $ 0.02478
Stock 1000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Base Part Number: P*MD3
Supplier Device Package: SOT-666
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A PEMD3,115 pre-biased array is a type of transistor array designed to meet the requirements of high reliability and low power consumption. The PEMD3, 115 is a bipolar junction transistor (BJT) array with three input transistor emitters and five output transistors. This allows for a great degree of variability in the operation of the device, as well as a very low power consumption.

The PEMD3, 115 offers an increasingly competitive advantage for applications such as: memory chips, DSPs, power controllers, RF power amplifiers, switching converters and other mixed-signal applications. It is an ideal choice for many of these applications, due to its high degree of reliability, low power consumption and high performance. In addition, the PEMD3, 115 offers a wide selection of transistor and resistor states, allowing for the design of complex circuitry with updated parameters.

The PEMD3, 115 utilizes a dielectrically isolated substrate, which is separated from the body of the transistor by a thin insulating layer. This allows for uniform current control, as well as improved device isolation. This substrate isolation also helps to reduce the noise caused by capacitance coupling and current leakage at the substrate/base junction.

The PEMD3, 115 works on a principle of pre-biased transistors. This means that the base and collector voltage of each transistor has been specified in the design, and all the necessary components for a specific transistor type, such as resistors and capacitors, are already mounted. This helps to ensure uniformity and reliability of each device in the array.

In addition, the PEMD3, 115 also uses current limiting resistors to reduce the output current of each transistor to more manageable levels. This helps to extend the lifetime of each transistor, as well as eliminate the risk of short-circuiting or device failure due to excessive current.

In practice, the PEMD3, 115 is often used in the development of high-speed, low-power switching converters, high-speed memory chips and other high-speed, power-hungry digital or analog circuits. These applications benefit from the combination of high reliability, low power consumption and high performance.

To sum up, the PEMD3, 115 pre-biased array is a type of bipolar junction transistor (BJT) array designed to meet the requirements of high reliability and low power consumption. It utilizes a dielectrically isolated substrate to ensure uniform current control and improved device isolation, and uses pre-biased transistors to ensure uniformity and reliability of each device in the array. It is often used in the development of high-speed, low-power switching converters, high-speed memory chips and other high-speed, powerful digital and analog circuits.

The specific data is subject to PDF, and the above content is for reference

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