PEMD12,315 Allicdata Electronics
Allicdata Part #:

PEMD12,315-ND

Manufacturer Part#:

PEMD12,315

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN/PNP SOT666
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: PEMD12,315 datasheetPEMD12,315 Datasheet/PDF
Quantity: 1000
8000 +: $ 0.03718
Stock 1000Can Ship Immediately
$ 0.04
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Base Part Number: MD12
Supplier Device Package: SOT-666
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PEMD12,315 is a type of bipolar junction transistor (BJT) array array, pre-biased to produce a wide variety of standard current and voltage functions. It is designed to be used in low noise, low power, and low voltage circuitry. This versatile design is well-suited to a broad range of applications, as well as providing superior performance in a range of electrical and mechanical conditions.

The PEMD12,315 has three alternating NPN and PNP bipolar transistors in an array with a common collector and base. A power supply of 5V to 20V is applied to the collectors, providing forward and bias voltages for the two transistors in the array. The device features two diodes connected in series between the two transistors for pre-bias operation. The current flowing through the diodes sets the base-emitter voltages of the two transistors, allowing the device to operate without external bias or adjustment, providing performance stability over a wide temperature range.

The PEMD12,315 is useful for a variety of applications, including current and voltage regulation, amplifying, reducing, and controlling signals, and switching solutions. The device is designed to minimize losses and achieve a low on-resistance of less than 0.25%. This makes the BJT array an ideal choice for applications with low power requirements and narrow temperature tolerances, such as battery-powered electronics.

The PEMD12,315 also features an excellent input impedance and a high current gain, allowing it to be used in multiple amplifier designs. Its low power dissipation makes it an ideal choice for applications where low power consumption is of paramount importance and space constraints necessitate a small footprint. Additionally, the PEMD12,315 is capable of providing a wide dynamic range and fast switching speeds, making it a great choice for digital circuits.

Due to the wide range of applications that the PEMD12,315 can be used in, as well as its robust design and superior performance, it is one of the most versatile BJT arrays available. Its small size and low power consumption make it an ideal choice for low voltage, high performance circuits, while its low resistance features make it great for solutions that require a high efficiency. Furthermore, its pre-biased operation ensures that it maintains a high level of performance across a wide range of environmental and application conditions.

The specific data is subject to PDF, and the above content is for reference

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