Allicdata Part #: | PEMD30,315-ND |
Manufacturer Part#: |
PEMD30,315 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN/PNP SOT666 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | PEMD30,315 Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.03718 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | -- |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-666 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PEMD30,315 Applications Field and Working Principle
The PEMD30,315 is a type of power electronic component classified as Transistors-Bipolar (BJT)-Arrays. It is a pre-biased component which is used within power supplies. It can also be used within other applications to handle high voltage and current applications such as switches, audio amplifiers, military and aerospace applications.
The PEMD30,315 has a low on-state resistance, enabling it to handle higher voltage and current applications. It also has a high frequency capability, which makes it desirable in some audio applications. Its excellent temperature stability allows it to maintain its performance over a wide range of temperatures and environments, making it suitable for a number of different application fields.
The working principle of the PEMD30,315 is based on a process known as BiCMOS, which stands for Bipolar-junction transistor Complementary Metal Oxide Semiconductor. In this process, the semiconductor combines the characteristics of both a PNP bipolar transistor and an NMOS (N-type Metal Oxide Semiconductor) transistor. This creates a bipolar structure, which is responsible for the low on-state resistance.
The PEMD30,315 also has a built-in base current regulation, which helps reduce electrical noise, making it ideal for audio applications. In addition, the device has a built-in thermal protection, which prevents meltdown if the temperature of the device exceeds an established limit, providing reliability in even high-stress applications.
Overall, the PEMD30,315 is a unique device which is capable of providing both high voltage and current applications, as well as excellent temperature performance. It is especially useful for audio, military and aerospace applications, with its excellent temperature stability and thermal protection.
The specific data is subject to PDF, and the above content is for reference
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