PEMD19,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	1µA
Frequency - Transition:	--
Power - Max:	300mW
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-666

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Introduction

PEMD19,115 is a pre-biased, bipolar junction transistor (BJT) array device. It is part of the family of transistors developed by Pulse Electronics. The device is available in a single package, with four independent drivers and a collector. Individual drivers can be pre-biased to a working voltage, allowing them to be connected to different output sources. This makes the device ideal for providing an efficient power supply to multiple power-intensive components. In addition, the device offers more efficient switching and lower power consumption than single BJT devices.

Application Field

PEMD19,115 is typically used in applications requiring efficient power supply to multiple power-intensive components, such as RF amplifiers, sensors and controllers. The pre-biased feature of the device allows them to be connected to various independent sources, making it suitable for applications requiring automatic switching of power supply. In addition, the device is also used in the telecommunications sector, providing an efficient power supply to wireless communication devices.

Working Principle

The device operates using a process known as the Darlington pair, which links two BJTs together such that the current amplified by the first transistor is further amplified by the second. This allows for higher gain with lower power consumption.PEMD19,115 works by connecting the base of its four independent drivers to a source with a low source resistance. This is accomplished by combining the individual emitters, collectors and bases into one integrated circuit. When a voltage is applied to the base of the transistor, a current is drawn through the collector. This current is then amplified by the Darlington pair, allowing for more efficient power delivery. In addition to the power amplification provided by the Darlington pair, the pre-biased feature allows the device to be connected to different sources. This allows for different voltage levels to be maintained at each output, providing more efficient power delivery.The device also offers better safety features than a single BJT device, such as short circuit protection and thermal shutdown, ensuring that the device does not overheat due to excessive current or voltage.

Conclusion

PEMD19,115 is an important part of the family of transistors developed by Pulse Electronics. It is a pre-biased bipolar junction transistor (BJT) array device, suitable for applications requiring efficient power supply to multiple power-intensive components. The device operates using the Darlington pair principle, offering higher gain with lower power consumption. The pre-biased feature also allows for multiple independent sources to be connected to the device, providing efficient power delivery. Finally, the device offers additional safety features, such as short circuit protection and thermal shutdown, maintaining its optimal performance while avoiding possible damage.

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