PEMD20,115

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PEMD20,115 is a pre-biased integrated array of transistors typically used for RF amplifiers and oscillators power control. It is a type of bipolar junction transistor (BJT) which offers very low noise and good starting frequency linearity. The device is constructed with a total of four transistors, two bipolars and two FETs. The BJTs are configured in a common source configuration for high current capacity and high gain power control.

The PEMD20,115 offers very low noise performance and low input capacitance. It also has a low input impedance with a bipolar type linearizing output which makes it suitable for high frequency and low noise applications. The device has a high current capacity with a high voltage control range and can operate at temperatures up to 200°C.

Another advantage of this device is the low parasitic capacitance it offers. This makes it possible to reduce the effects of high frequency interference on the circuit. The device also offers low power consumption and is relatively easy to use.

The working principle of PEMD20,115 is quite simple. It uses two bipolar transistors which are connected in a common source arrangement with each other. The FETs are connected in parallel to increase the current capacity and to provide higher input resistances. When an input signal is supplied to the device, it is amplified by the FETs and the bipolar transistors. The output of the device is then directly available as the amplified signal without any further amplification.

The PEMD20,115 can be used in various applications such as RF power amplifiers and power control. It is a perfect solution for low noise and high frequency applications as it provides a very low noise performance, low input capacitance, low power consumption and can operate at high temperatures. Additionally, it also offers a linearizing output which makes it suitable for high frequency and low noise applications.

In conclusion, PEMD20,115 is a pre-biased integrated array of transistors which offers excellent noise performance, low input capacitance and low power consumption. It is suitable for a wide range of RF and power control applications, and is able to operate at high temperatures. Furthermore, it has a linearizing output which makes it suitable for low noise and high frequency applications.

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