PEMD48,115 Allicdata Electronics

PEMD48,115 Discrete Semiconductor Products

Allicdata Part #:

1727-1721-2-ND

Manufacturer Part#:

PEMD48,115

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN/PNP SOT666
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: PEMD48,115 datasheetPEMD48,115 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.04275
Stock 1000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 100 @ 10mA, 5V
Base Part Number: P*MD48
Supplier Device Package: SOT-666
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms, 22 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PEMD48,115 are pre-biased junction transistors. It enables the user to create higher power circuit solutions with minimum effort and cost. It is widely used in automotive systems, power supplies, motor control, switching power supplies, and lighting systems.

The PEMD48,115 is a pre-biased junction transistor array. This means the array is set with a base-emitter and collector-emitter bias before it is shipped from the factory. This allows the user to simply connect the power, ground, and input signals to achieve the desired output voltage or current level. In other words, the user does not have to independently set the base-emitter and collector-emitter bias of each individual transistor.

The PEMD48,115 consists of four pre-biased junction transistors arranged in an array. The components in the array are packaged into a single 4-pin, 4 LEADed, plastic encapsulated component. This component is configured with a collector, base, and emitter connection at each position, allowing the user to create either three- or four-phase power circuits and other designs.

The working principle of the PEMD48,115 is based on a principle known as Darlington configuration. This configuration uses an internal NPN Darlington transistor array inside the component. The transistor array is setup with a base-emitter and collector-emitter bias before the component is shipped from the factory. When an appropriate voltage is applied to the component\'s power pin, the Darlington configuration will cause a current to flow from the base to the collector via the emitter. This current is then used to drive the output circuit, thus providing power to the desired load.

The PEMD48,115 is designed to be used in high-current applications, such as automotive and industrial power supplies. This component is capable of switching loads up to 50A @ 36V, and can provide an efficient and cost-effective alternative to more expensive high-current switching solutions. It is also useful for driving high-current motor circuits, such as those found in automotive and industrial applications. The design of this component also makes it ideal for dimming circuits, with a low-voltage driver, such as those found in lighting systems.

To summarize, the PEMD48,115 is apre-biased junction transistor array. It is configured with a collector, base, and emitter connection at each position, thus allowing the user to create three- or four-phase power circuits and other designs. The component is designed to be used in high-current applications, and is capable of switching loads up to 50A@36V. In addition, the Darlington configuration of this component makes it ideal for dimming circuits and other high-current applications. Overall, the PEMD48,115 is an excellent choice for achieving high-power circuit solutions with minimum effort and cost.

The specific data is subject to PDF, and the above content is for reference

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