PEMD4,115 Discrete Semiconductor Products

DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 1mA, 5V
Base Part Number:	P*MD4
Supplier Device Package:	SOT-666
Package / Case:	SOT-563, SOT-666
Mounting Type:	Surface Mount
Power - Max:	300mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	1µA
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	--
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to PEMD4,115 Arrays Pre-Biased Transistors

PEMD4,115 are arrays of pre-biased transistors (BJTs) commonly used in electronic circuits. The device consists of a suite of four discrete transistors along with the pre-biased element that work together to provide exceptional power efficiency, high-performance, and minimum junction temperature rise.

Application Field of PEMD4,115

PEMD4,115 are designed for efficient power amplification in applications where space and power efficiency are required. It is often used in low power base station amplifiers, automotive audio amplifiers, and linear regulators. It is also suitable for usage in a variety of other hard-wired circuits and systems including instrumentation amplifiers and medical devices.

Working Principle of PEMD4,115

The PEMD4,115 is a four-element pre-biased array. Each transistor is individually pre-biased for optimal performance. This feature offers a number of benefits including enhanced efficiency and power distribution. The four-element array works in tandem with each individual transistor to generate a single, powerful output. It does so by combining each transistor’s output in a single, unified output. The output voltage is controlled by the current flow between the pre-biased elements. The current flow through each element of the array is regulated by the external circuit. This means that the output voltage can be adjusted to match the specifications of the circuit. The pre-biased transistors then amplify the current and transfer it to the output. The device also uses patented thermal management technology to ensure maximum performance and to keep junction temperature at a safe level. This technology reduces power consumption by dissipating heat across the transistors and effectively withdrawing current when the temperature rises above a certain level.

Conclusion

PEMD4,115 arrays of pre-biased transistors are widely used in a variety of application fields where space and power efficiency are a priority. It offers superior performance, high-efficiency and minimal junction temperature rise. The four-element array works in tandem with each individual pre-biased transistor to generate a single, powerful output. With patented thermal management technology and efficient power amplification, the PEMD4,115 is an ideal choice for a variety of electronic applications.

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