PEMD13,115 Allicdata Electronics
Allicdata Part #:

PEMD13,115-ND

Manufacturer Part#:

PEMD13,115

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN/PNP SOT666
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: PEMD13,115 datasheetPEMD13,115 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.04275
Stock 1000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Base Part Number: MD13
Supplier Device Package: SOT-666
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A PEMD13,115 is a pre-biased array of bipolar transistors, or BJT. It consists of three transistors connected in series between two external power terminals. The base of each device is connected to the external power supply and the collector of each device is connected to the output. This pre-biased configuration of interconnected transistors provides very good performance levels.

The advantage of the pre-biased array of BJT’s is that it provides two different types of operation. When using positive voltage at the applied terminals, the three transistors form an NPN transistor and the output is positive. Conversely, when the negative voltage is applied to the terminals, the three transistors form a PNP transistor and the output is negative.

Common applications of the PEMD13,115 pre-biased array transistors include control circuits, motor control circuits, motor drivers and stepper motor drives. It can also be used in power supply design, switching regulators, amplifier and voltage regulator circuits, and as a power switch in various types of electronic systems. It is also suitable for use in applications that require high current drivers and fast switching performance.

The primary benefit of the PEMD13,115 pre-biased array is the efficiency and performance achieved due to the interconnected nature of the transistors. The interconnected array is able to supply high levels of current with low power dissipation levels compared to an unbuffered BJT. In addition, the pre-biased configuration ensures that the voltage across the device is constant and the current is not affected by the load.

The PEMD13,115 pre-biased array uses a two-step process when operating. First, the external power supply is connected to the applied terminals. This supplies the base current to the base of the three series transistors and causes a voltage drop across each device, resulting in a difference between the collector outputs. This difference between the collectors is then used to drive a load circuit, either directly or through an amplifier stage.

The second step is the pre-biasing of the transistors. In this stage, the external power supply is disconnected and the base of each transistor is pre-biased with a voltage, typically half the applied voltage. This ensures that the voltage between the collectors remains constant, regardless of the state of the load. This maintains the overall output performance of the array.

In summary, the PEMD13,115 pre-biased array is a versatile device that is capable of providing high current and low power dissipation. It is suitable for use in control circuits, motor control circuits, motor drivers and stepper motor drives. It is also capable of powering circuits such as switching regulators, voltage regulators and amplifier stages. By pre-biasing the transistors in the array, it is also able to maintain the voltage across the device and provide consistent performance.

The specific data is subject to PDF, and the above content is for reference

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