PEMD18,115 Allicdata Electronics
Allicdata Part #:

PEMD18,115-ND

Manufacturer Part#:

PEMD18,115

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN/PNP SOT666
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: PEMD18,115 datasheetPEMD18,115 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.04275
Stock 1000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Base Part Number: MD18
Supplier Device Package: SOT-666
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PEMD18,115 Application Field and Working Principle

PEMD18,115 transistors are semiconductor devices that are commonly referred to as Bipolar Junction Transistors (BJTs). BJTs are electro-mechanically operated components which consists of three terminals namely the base, emitter and the collector. Depending upon the biasing of the terminals of the BJT, they can serve multiple purposes such as switches, amplifiers, oscillators and many more.

One of the most common BJT is the PEMD18,115. It is a pre-biased BJT array that contains two transistors that share a common base terminal. It is designed for power switching applications and it has an operating voltage of 5 volts. This transistor array is ideal for applications such as pulse modulation, power supply control and power switching.

The PEMD18,115 transistor array consists of two BJTs; one NPN and one PNP. When the base terminal is biased with a voltage that is positive on the PNP and negative on the NPN, the circuit will be turned \'ON\', allowing for current to flow between the collector and emitter. When the voltage is reversed, the circuit will be turned \'OFF\' and no current will flow. This type of functionality is ideal for switching between two states of power control.

The PEMD18,115 also has an impressive thermal overload protection feature which helps in protecting the transistor array from damage due to overheating. The protection feature disables the circuit in case it gets overloaded, thus preventing any kind of irreparable damage. This feature is especially important when the PEMD18,115 is used in switching applications.

The PEMD18,115 also has a wide range of features such as high reliable operation, high voltage capability, power supply voltage regulation and short circuit current limiting. It is also compatible with a wide range of integrated circuits, allowing for a more efficient design.

Overall, the PEMD18,115 is a great pre-biased BJT array for power switching applications. It has an impressive set of features, such as thermal overload protection, high voltage capability and short circuit current limiting, making it ideal for the more efficient design of power supply control applications.

The specific data is subject to PDF, and the above content is for reference

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