PMXB120EPE

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PMXB120EPE is a P-Channel Enhancement Mode Field Effect Transistor (FET) that has been designed for power management in a wide range of applications, from battery management and DC motors to DC-DC converters and general power switching. Being an Enhancement Mode FET it is a type of FET where the source to drain channel does not require a gate to source voltage for it to turn on, unlike a Depletion Mode FET. This means that it can be used in applications where the gate is isolated from the voltage source.

PMXB120EPE is a single FET with a compact, low-profile form factor, making it ideal for circuits with limited board space. With a drain to source drain breakdown voltage of up to 120V, it has a higher voltage rating than many other types of FETs, and its low on-resistance of 6.7mΩ makes it suitable for high current applications.

The chip has a low gate threshold voltage, making it easy to switch, and it can handle up to a maximum of 70A of current. It features an internal thermal protection feature, which is a useful safety feature as it prevents the chip from overheating due to excessive current passing through it. The chip also has a low ESD (electrostatic discharge) sensitivity, meaning it is less susceptible to damage caused by static charges.

The application field of the PMXB120EPE is broad, ranging from high-current power switches, DC-DC converters, solar cell controllers, battery management, and motor control applications. In addition, due to its low profile, it is widely used in power management applications in consumer and industrial systems, such as cell phones, laptops, tablets and other portable electronics.

The working principle of the PMXB120EPE is fairly straightforward: when a positive voltage is applied to the gate, current can flow from the source to the drain. This is due to the fact that the gate attracts the electrons in the channel, which reduces the width of the depletion region and increases the conductivity of the channel. This allows current to flow and the FET is said to be on.

When a negative voltage is applied to the gate, current cannot flow from the source to the drain, as the electrons are repelled from the gate and the depletion region of the channel is widened, thus reducing the conductivity. This is known as the FET being off. The resistance between source and drain when the FET is off is known as the drain to source cutoff voltage, and in the case of the PMXB120EPE, it is typically up to 120V.

In summary, the PMXB120EPE is an Enhancement Mode FET with a high drain to source breakdown voltage of up to 120V, a low gate threshold voltage, and a low on-resistance of 6.7mΩ. It is suitable for applications such as battery management, motor control and high-current power switches. It has an internal thermal protection feature to protect against overheating as well as a low ESD sensitivity. Due to its small size and wide range of applications, it is a popular choice for use in consumer and industrial systems.

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