PMXB350UPEZ Discrete Semiconductor Products |
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| Allicdata Part #: | 1727-1473-2-ND |
| Manufacturer Part#: |
PMXB350UPEZ |
| Price: | $ 0.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET P-CH 20V 1.2A 3DFN |
| More Detail: | P-Channel 20V 1.2A (Ta) 360mW (Ta), 5.68W (Tc) Sur... |
| DataSheet: |  PMXB350UPEZ Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.05998 |
Specifications
| Vgs(th) (Max) @ Id: | 950mV @ 250µA |
| Package / Case: | 3-XDFN Exposed Pad |
| Supplier Device Package: | DFN1010D-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 360mW (Ta), 5.68W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 116pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.3nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 447 mOhm @ 1.2A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 1.2A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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PMXB350UPEZ is a part of FETs and MOSFETs family. It is a single device with a voltage rating of 350V. It is a common-source MOSFET device with an extremely low on-resistance and gate charge and is suitable for digital, linear and low frequency applications.The PMXB350UPEZ is a power MOSFET transistor with a vertical channel design and a built-in FET body diode. It has significant advantages in regulating current in switching applications. It is also especially suitable for use in audio and low frequency applications.It has a wide gate voltage range of 4.5V with a maximum drain current of 6A. It also has a very low standby gate current and a low gate capacitance for quick switching applications. In addition, its operating temperature range of -55C to 180C makes it suitable for a wide variety of commercial, industrial and medical applications.The PMXB350UPEZ has a maximum power dissipation of 25W. It is also highly reliable, with a mean time before failure specification of more than 108 hours at an operating temperature of 100C.The PMXB350UPEZ is a very efficient device, with a maximum drain efficiency of 99%. This makes it ideal for power conversion applications. It is also very reliable and has low on-state resistance, which reduces thermal losses.It is also capable of handling high frequencies, with a maximum operating frequency of 1MHz. It is also highly efficient in comparison to other power MOSFET devices, with a maximum efficiency of 99%.The PMXB350UPEZ has a wide application range in digital, linear and low frequency applications. It is an ideal choice for applications such as voltage regulators, motor control, switching power supplies, stepping motor controls, and low noise amplifier.In addition, the PMXB350UPEZ is designed to combine low on-state resistance, very low gate charge and high frequency operation. Its ability to handle high frequencies and low operating voltages makes it the perfect choice for applications such as power management, switching power supplies, and audio amplifiers.In terms of working principle, the PMXB350UPEZ works to switch current when the gate voltage is higher than the source voltage. When the gate voltage is lower than the source voltage, the MOSFET will not switch current. The on-resistance is determined by the voltage difference between the gate and source. The higher the voltage difference, the higher the drain current.The PMXB350UPEZ can also be used in linear and switching applications. In linear applications, the PMXB350UPEZ acts as a voltage controlled resistance in order to provide a linear output. This is done by applying a voltage across the drain and source terminals, which acts as a control voltage. As a result, the drain current will be regulated according to the input voltage. In switching applications, the PMXB350UPEZ acts as an electronic switch. This means that the MOSFET will be either in the on-state or the off-state depending on the voltage across the gate and source terminals. When the gate voltage is high and the source voltage is low, the MOSFET will be in the on-state, whereas when the gate voltage is low and the source voltage is high, the MOSFET will be in the off-state.The PMXB350UPEZ is a viable choice for many commercial and industrial applications. Its wide operating temperature range and reliability makes it a great choice for many types of applications. Its low on-state resistance and high efficiency make it the ideal choice for power conversion applications. In addition, the PMXB350UPEZ is a great choice for applications involving relatively low voltages and high frequencies, such as power management and audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
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