PMXB120EPEZ Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1472-2-ND |
Manufacturer Part#: |
PMXB120EPEZ |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 30V 2.4A 3DFN |
More Detail: | P-Channel 30V 2.4A (Ta) 400mW (Ta), 8.3W (Tc) Surf... |
DataSheet: | PMXB120EPEZ Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.07299 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 3-XDFN Exposed Pad |
Supplier Device Package: | DFN1010D-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400mW (Ta), 8.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 309pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 2.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PMXB120EPEZ is a semiconductor device and is a source of plethora of electronic devices such as dishwashers, computers, washing machines and air conditioners. The device is a Field Effect Transistor (FET) with a MOSFET gate. Originally, MOSFETs have been classified into two major categories - enhancement and depletion; this particular device is an enhancement type transistor.
This MOSFET has an excellent current capacity along with a very high transition frequency. It has been designed for applications such as pulse width modulation (PWM) switching but can also be used for high-frequency switching and high-voltage, low-noise applications. It is also a fast switching device. The device has three leads (gate, drain, and source) and operates by modulating the power supply voltage between the source and the drain in response to the control voltage applied to the gate terminal.
Although this device is limited to high-frequency switching, its application field and working principle are quite diversified. As a high-frequency, high-speed switching device, it is generally used in digital systems including microprocessors, low-noise analog devices, and digital signal processing circuits. It can also be used in amplifiers and regulators, as well as in waveform generators. Additionally, it can be used in radiofrequency active devices, in passive filters and in power conversion circuits.
The working principle behind the PMXB120EPEZ is based on the pMOS device characteristics. The power supply voltage applied between the source and drain is modulated by the voltage applied to the gate terminal. As the gate voltage increases, the current flowing through the device increases, thus the output voltage increases. On the other hand, if the gate voltage is decreased, the current flowing through the device decreases, thus the output voltage decreases.
The PMXB120EPEZ has several advantages over conventional FETs, such as its space-saving nature, low gate capacitance, low noise, high frequency operation, and gate protection. Additionally, it’s easy to use, as it can be connected directly to the output of a digital circuit without heat sinking.
In conclusion, the PMXB120EPEZ is a high-frequency, high-speed switching device that has totally revolutionized the way digital systems are built today. Its high current capabilities and high frequency operation make it ideal for applications such as pulse width modulation, amplifiers, regulators, and passive filters. It is a high-performance, space-saving device, and is a must-have for any digital system.
The specific data is subject to PDF, and the above content is for reference
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