PMXB120EPEZ Allicdata Electronics

PMXB120EPEZ Discrete Semiconductor Products

Allicdata Part #:

1727-1472-2-ND

Manufacturer Part#:

PMXB120EPEZ

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET P-CH 30V 2.4A 3DFN
More Detail: P-Channel 30V 2.4A (Ta) 400mW (Ta), 8.3W (Tc) Surf...
DataSheet: PMXB120EPEZ datasheetPMXB120EPEZ Datasheet/PDF
Quantity: 1000
5000 +: $ 0.07299
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400mW (Ta), 8.3W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 309pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PMXB120EPEZ is a semiconductor device and is a source of plethora of electronic devices such as dishwashers, computers, washing machines and air conditioners. The device is a Field Effect Transistor (FET) with a MOSFET gate. Originally, MOSFETs have been classified into two major categories - enhancement and depletion; this particular device is an enhancement type transistor.

This MOSFET has an excellent current capacity along with a very high transition frequency. It has been designed for applications such as pulse width modulation (PWM) switching but can also be used for high-frequency switching and high-voltage, low-noise applications. It is also a fast switching device. The device has three leads (gate, drain, and source) and operates by modulating the power supply voltage between the source and the drain in response to the control voltage applied to the gate terminal.

Although this device is limited to high-frequency switching, its application field and working principle are quite diversified. As a high-frequency, high-speed switching device, it is generally used in digital systems including microprocessors, low-noise analog devices, and digital signal processing circuits. It can also be used in amplifiers and regulators, as well as in waveform generators. Additionally, it can be used in radiofrequency active devices, in passive filters and in power conversion circuits.

The working principle behind the PMXB120EPEZ is based on the pMOS device characteristics. The power supply voltage applied between the source and drain is modulated by the voltage applied to the gate terminal. As the gate voltage increases, the current flowing through the device increases, thus the output voltage increases. On the other hand, if the gate voltage is decreased, the current flowing through the device decreases, thus the output voltage decreases.

The PMXB120EPEZ has several advantages over conventional FETs, such as its space-saving nature, low gate capacitance, low noise, high frequency operation, and gate protection. Additionally, it’s easy to use, as it can be connected directly to the output of a digital circuit without heat sinking.

In conclusion, the PMXB120EPEZ is a high-frequency, high-speed switching device that has totally revolutionized the way digital systems are built today. Its high current capabilities and high frequency operation make it ideal for applications such as pulse width modulation, amplifiers, regulators, and passive filters. It is a high-performance, space-saving device, and is a must-have for any digital system.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "PMXB" Included word is 12
Part Number Manufacturer Price Quantity Description
PMXB56EN Nexperia USA... 0.0 $ 1000 MOSFET N-CH 30V 3.2A 3DFN...
PMXB65UPEZ Nexperia USA... 0.39 $ 9954 MOSFET P-CH 12V 3.2A DFN1...
PMXB65ENEZ Nexperia USA... 0.12 $ 1000 MOSFET N-CH 30V 3.2A 3DFN...
PMXB56ENZ Nexperia USA... 0.08 $ 1000 MOSFET N-CH 30V 3.2A DFN1...
PMXB120EPEZ Nexperia USA... 0.08 $ 1000 MOSFET P-CH 30V 2.4A 3DFN...
PMXB120EPE Nexperia USA... 0.35 $ 23 MOSFET P-CH 30V 2.4A 3DFN...
PMXB43UNEZ Nexperia USA... 0.13 $ 10000 MOSFET N-CH 20V 3.2A 3DFN...
PMXB75UPEZ Nexperia USA... 0.06 $ 1000 MOSFET P-CH 20V DFN1010D-...
PMXB350UPEZ Nexperia USA... 0.07 $ 1000 MOSFET P-CH 20V 1.2A 3DFN...
PMXB40UNEZ Nexperia USA... 0.07 $ 1000 MOSFET N-CH 12V 3.2A 3DFN...
PMXB40UNE Nexperia USA... 0.39 $ 4668 MOSFET N-CH 12V 3.2A 3DFN...
PMXB360ENEAZ Nexperia USA... 0.08 $ 10000 MOSFET N-CH 80V 1.1A 3DFN...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics