PMXB75UPEZ Discrete Semiconductor Products |
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Allicdata Part #: | 1727-2314-2-ND |
Manufacturer Part#: |
PMXB75UPEZ |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 20V DFN1010D-3G |
More Detail: | P-Channel 20V 2.9A (Ta) 317mW (Ta), 8.33W (Tc) Sur... |
DataSheet: | PMXB75UPEZ Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.05727 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 3-XDFN Exposed Pad |
Supplier Device Package: | DFN1010D-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 317mW (Ta), 8.33W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 608pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 2.9A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.9A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PMXB75UPEZ Application Field and Working Principle
The PMXB75UPEZ is a MOSFET, short for a metal oxide silicon field effect transistor, an electronic device designed to switch and amplify electrical signals. This MOSFET comes from the PMX family, a line of power MOSFETs from Panasonic designed for high-reliability, power switching applications. As a single device, PMXB75UPEZ requires no external components for operation, making it an ideal choice for various applications across the electronics industry. This article will give a detailed explanation of the PMXB75UPEZ device, including its application field and working principle.
Application Field
The PMXB75UPEZ is a high-power MOSFET that is often employed to drive high-current or high-voltage loads. These loads include DC servo motors, DC and inverter SCR drives, AC relay and contactor circuits, as well as industrial and consumer power switching applications. The device is also used in battery-powered equipment that requires both low power consumption and low voltage range, such as consumer electronics, automotive, and other power switching applications. Furthermore, its high-voltage tolerance and low on-resistance make it suitable for applications that require a high current load and low power consumption, such as voltage converters, battery chargers, and various types of motor drives.
The PMXB75UPEZ is also employed in power management applications, such as backlight control, battery charging monitoring, and power supply control. Additionally, the device can be used in heating systems requiring a rugged and reliable switching element, such as AC heater thermostats, space heaters, and refrigeration equipment. Other popular design applications with the PMXB75UPEZ include security systems, LED lighting, portable devices, and industrial equipment.
Working Principle
A MOSFET is an electronically controlled switch, meaning it uses an electrical signal to open or close a circuit. The PMXB75UPEZ MOSFET uses four pins, called the source, gate, drain, and body (or substrate). As its main components, it includes a semiconductor substrate and an insulating gate dielectric on top of it. The semiconductor substrate acts as the base for the MOSFET and its source and drain are created by doping the substrate with impurities.
The insulating gate dielectric is placed on top of the semiconductor and acts as an insulation layer between the gate and the body, preventing current from flowing from the gate to the body. When a positive voltage is applied to the gate of the MOSFET, the insulating gate dielectric becomes charged, creating an electric field that attracts electrons from the body and across the channel, thus allowing current to flow from the source to the drain. Conversely, when the gate voltage is removed, the electric field disappears, stopping current flow.
In terms of construction and connection, the PMXB75UPEZ is a 4-pin type device that uses a dual gate construction. The source and drain are used to connect the device to the external circuit, while the gate is used to control the current flow between the source and the drain. Depending on the applied voltage, the MOSFET acts as an open switch or a closed switch, allowing or blocking current between the source and drain. The body, also known as the substrate, is used to connect the drain and source together when necessary.
In addition to its main features, the PMXB75UPEZ also has a few important protection features. This includes overvoltage protection, overcurrent protection, and a temperature warning detector. These features provide the device with a heightened level of protection in the event of an overvoltage, overcurrent, or temperature condition. Furthermore, the device has very low gate leakage current, making it suitable for power saving designs.
The PMXB75UPEZ is an efficient, reliable, and cost-effective single MOSFET that can be used in a wide range of applications, from industrial power switching to consumer electronics. Its versatile range of features allows it to meet a variety of needs, including high-current and low-power switching, overvoltage and overcurrent protection, and temperature monitoring. By combining the different components of the device, designers can create power management solutions with increased reliability and safety for various applications.
The specific data is subject to PDF, and the above content is for reference
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