PMXB43UNEZ Discrete Semiconductor Products

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The PMXB43UNEZ is an N-channel Enhancement Mode Field Effect Transistor (FET). Field effect transistors are a type of transistor used to amplify and switch electrical signals. They are especially useful in applications that require very high input impedance, high switching speed and low power loss. A FET consists of a gate, a source, and a drain, and works by controlling the flow of electrons between the source and the drain. When a voltage is applied to the gate, it modifies a transistor\'s conductivity from low to high, acting as an on-off switch. FETs are used in many applications and can be found in signal processing, digital-to-analog conversions and amplifier circuits.

The PMXB43UNEZ is an example of a single enhancement-mode FET. It has a low on-resistance and uses a P3 architecture with an optimized copper pillar layout to maximize thermal performance. It has a high dV/dt rating and fast on-and-off switching times to reduce power losses and, consequently, heat in the circuits. This type of FET is often used in power management applications, such as DC-DC converters, current sensors and motor drivers.

The PMXB43UNEZ features a low drain-source-on-resistance of 0.43 Ohm and can handle a continuous drain current of 30A and pulse current of 60A. It has a drain voltage rating of 80V and an operating temperature range of -55C to +150C. The device also has a low gate threshold voltage of 1.8V, allowing it to switch with a low gate drive voltage. This makes the PMXB43UNEZ an ideal choice for applications where power and space management are essential.

The PMXB43UNEZ works by modifying the conductivity between its source and its drain. When a voltage is applied to the gate, current can flow from the source to the drain, thus turning the device on. When the gate voltage is removed, current flow is halted, thus turning the device off. This on-and-off switching capability is what makes this device ideal for power management applications.

In summary, the PMXB43UNEZ is an N-channel enhancement-mode FET. It features a low on-resistance and optimized copper pillar layout to maximize thermal performance and reduce power losses. This type of FET is ideal for power management applications such as DC-DC converters, current sensors and motor drivers, where power and space management are essential. This FET works by controlling the flow of electrons between its source and its drain, turning on and off when a voltage is applied or removed from its gate.

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