PMXB65UPEZ Discrete Semiconductor Products |
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Allicdata Part #: | 1727-2177-1-ND |
Manufacturer Part#: |
PMXB65UPEZ |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 12V 3.2A DFN1010D-3G |
More Detail: | P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Sur... |
DataSheet: | PMXB65UPEZ Datasheet/PDF |
Quantity: | 9954 |
1 +: | $ 0.35280 |
10 +: | $ 0.24822 |
100 +: | $ 0.16323 |
500 +: | $ 0.09644 |
1000 +: | $ 0.07419 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 3-XDFN Exposed Pad |
Supplier Device Package: | DFN1010D-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 317mW (Ta), 8.33W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 634pF @ 6V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 72 mOhm @ 3.2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Cut Tape (CT) |
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PMXB65UPEZ transistors are Field Effect Transistors (FETs) in which the conductivity is controlled by a voltage applied to an insulated gate electrode. This type of FET, specifically a MOSFET or Metal-Oxide Semiconductor FET, are widely used in the power electronics field due to their excellent switching properties, and their ability to handle large currents while operating at a low voltage. PMXB65UPEZ transistors are single-gate MOSFETs, meaning they have one gate electrode and operate in either an enhancement or depletion mode, depending on the type of voltage applied to the gate.
PMXB65UPEZ transistors are often used as power switches due to their low on-resistance and low gate-charge characteristics, which make them ideal for short-time switching in applications such as computer power supplies and other electronic circuits which must be turned on and off in rapid succession. They are also suitable for applications requiring high speeds, such as analog and digital circuits, frequency changers, and power converters.
The working principle of a PMXB65UPEZ transistor is based on the injection of minority carriers into the channel region beneath the gate electrode. When a positive voltage is applied to the gate electrode, the electric field caused by the applied voltage causes the majority carriers in the channel to repel away from the gate and be replaced by minority carriers. This results in an inversion layer in the channel, changing its conductivity and allowing current to flow through the device.
When a negative voltage is applied to the gate electrode, the minority carriers in the inversion layer are repelled and the gate current is reduced, reducing the current flow through the device. This is known as the depletion mode, since the minority carriers are being depleted from the channel region.
In addition to its use as a power switch, PMXB65UPEZ transistors can also be used for applications such as current-limiting, overvoltage protection, and precision switching. However, due to the high gate-charge of the device, it is not suitable for applications requiring a very high switching speeds or high power levels.
PMXB65UPEZ transistors are widely used in the power electronics industry, due to their low on-resistance, low gate-charge, and their ability to handle high currents while operating at a low voltage. They are also suitable for applications requiring high speeds, such as analog and digital circuits, frequency changers, and power converters, making them an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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