PMXB56ENZ Allicdata Electronics

PMXB56ENZ Discrete Semiconductor Products

Allicdata Part #:

1727-2313-2-ND

Manufacturer Part#:

PMXB56ENZ

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V 3.2A DFN1010D-3G
More Detail: N-Channel 30V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Sur...
DataSheet: PMXB56ENZ datasheetPMXB56ENZ Datasheet/PDF
Quantity: 1000
5000 +: $ 0.06774
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 209pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PMXB56ENZ is a type of transistor found in the FETs, MOSFETs, and Singles categories in the transistors family. It is a Dual FET, Insulated Gate Bipolar transistor (IGBT), which is primarily used as a switch in many different applications. The PMXB56ENZ is also referred to a common IGBT.

It has a rated blocking voltage of 600V and a continuous current of 22A. It is used as a switch in the conversion of electrical energy due to the polarity switching time being significantly fast, which is why the PMXB56ENZ is popular among commercial applications that require an efficient switch with a large voltage range.

The working principle of a PMXB56ENZ IGBT is a combination of an insulated gate bipolar transistor and an insulated metal oxide semiconductor (MOSFET) at the same time. This is done by having one side of the transistor receive a positive voltage and the other side receiving a negative voltage from the collector side to the emitter side.

At the same time, the gate is insulated from the collector and emitter using an oxide layer, which allows it to be used as an open switch and thus controlling the current flow when voltage is applied. The IGBT also has an internal body-diode, which is used to clamp the voltage above and below the P-Base and N-Base when the IGBT switch operates.

The applications of PMXB56ENZ IGBTs are vast. It is commonly used as a switch in various motor control applications and can also be found in industrial, automotive, and consumer applications. It is widely used in home appliances such as washing machines, air conditioners, and refrigerators. It is also found in industrial applications like heating and welding, as well as in power inverters and power supplies. In automotive applications it is used in engine control systems and electric vehicles.

Another application of the PMXB56ENZ is in motor speed control and brushesless motor drives, where the control and switch times are important. Lastly, it is also frequently utilized for the safe disconnection of high voltage AC power needs.

To sum up, the PMXB56ENZ IGBT is a highly efficient and dependable switch with a production life that aligns with the needs of many applications. It is widely used in motor control, energy conversion and high voltage AC power disconnection applications. The high speed switch and polarity switching time further help make it a suitable switch, and it’s capabilty of high current makes it ideal for larger applications.

The specific data is subject to PDF, and the above content is for reference

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