PMXB360ENEAZ Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PMXB360ENEAZ is a single N-channel Enhancement-Mode Field Effect Transistor (FET) designed for load-switching and low-bias linear applications. This FETs is designed to minimize the problems associated with high-speed switching applications, and its ESD protection level has been optimised for use in high-temperature environments.

The PMXB360ENEAZ is well suited for high-density electronic systems found in consumer electronic applications such as digital TVs and mobile phones.

The supply voltage ranges from 6V to 29V and is capable of operating at a maximum junction temperature of 150℃. It offers excellent RDS(on) and QG characteristics, making it ideal for use in high-capacity power electromechanical systems.

The working principle of the PMXB360ENEAZ is based upon that of a conventional FET. When a gate voltage is applied, electrons are attracted to the drain, allowing current to flow between the drain and the source. This current flow can be controlled by adjusting the gate voltage. Additionally, the device has been designed to offer a very low threshold voltage, allowing it to be used in low-power systems.

The PMXB360ENEAZ has two operating modes; an Enhancement mode, which is used in load switching applications, and a Linear mode, which is used in low-bias linear applications. In the Enhancement mode, the FET is turned on when the gate voltage is greater than the threshold voltage, and the drain current rises proportionally with the gate voltage. In the Linear mode, the FET acts like a variable resistor, allowing a small amount of current to flow even when the gate voltage is below the threshold voltage.

In addition to the two modes of operation, the device also offers a wide frequency range (from 2MHz to 27GHz) as well as low-cost, high-current operation, making it ideal for use in high-speed switching applications. Furthermore, due to its high-temperature and ESD protection, the device can be used in high-temperature environments with confidence.

The PMXB360ENEAZ is a versatile and reliable single-Channel Enhancement-Mode Field Effect Transistor (FET) designed for load-switching and low-bias linear applications. It offers low-voltage, low-cost, and high-current operation, with a frequency range of 2MHz to 27GHz, making it suitable for use in high-speed switching applications. In addition, its ESD protection level has been optimised for use in high-temperature environments, making it reliable and dependable. Overall, the device is an ideal choice for high-density, high-speed switching and low-bias linear applications.

The specific data is subject to PDF, and the above content is for reference