PMXB56EN

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	3-XDFN Exposed Pad
Supplier Device Package:	DFN1010D-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	400mW (Ta), 8.33W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	209pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	6.3nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	55 mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	3.2A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Cut Tape (CT)

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Introduction

PMXB56EN is a single N-Channel MOSFET transistor. It is designed as a high-frequency amplifier or an analog switch. It is a low-cost solution used to switch power in high-performance applications. The PMXB56EN has two pins, drain and source, which allow it to regulate the flow of electricity inside the component.

Application Field

The PMXB56EN can be used for power distribution, overload protection, and frequency control applications. It can be used in various industries such as manufacturing, industrial automation, medical, and automotive. It can also be used in communication systems and power supply circuits.The PMXB56EN has superior operating temperature ratings, making it reliable for outdoor applications such as outdoor lighting, security systems, and warning systems. Its small size and low cost make it suitable for low-power applications as well.The PMXB56EN is also used in various entertainment and consumer electronics, such as digital audio amplifiers, audio processors, and guitar amplifiers. It is also used in mobile phones and portable devices such as mobile routers and Wi-Fi mats.

Working Principle

The PMXB56EN employs MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology. It is a type of transistor which is used to control the flow of electrical current between two or more nodes in a circuit.The PMXB56EN is made up of two parts, the gate and the drain. The gate is the controlling terminal of the transistor, and the drain is the output terminal. When an electrical voltage is applied to the gate and source, a band of electrons is formed between the source and drain, allowing current to flow.When the PMXB56EN is off, the gate controls the amount of current that the transistor can allow to flow. When the gate voltage is increased, the transistor allows more current to flow, and vice versa. This allows the transistor to regulate current in the circuit and to switch between two or more levels of current.

Conclusion

The PMXB56EN is a single N-Channel MOSFET transistor. It is a low-cost solution suitable for power distribution, overload protection, and frequency control applications in various industries. It has superior operating temperature ratings for outdoor applications. Additionally, its small size and low cost make it suitable for low-power applications as well. The PMXB56EN employs MOSFET technology to control the flow of current and can switch between two or more levels of current.

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