PMZB1200UPEYL Discrete Semiconductor Products |
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Allicdata Part #: | 1727-2325-2-ND |
Manufacturer Part#: |
PMZB1200UPEYL |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 30V SOT883 |
More Detail: | P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Su... |
DataSheet: | PMZB1200UPEYL Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.03802 |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Package / Case: | 3-XFDFN |
Supplier Device Package: | DFN1006B-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 310mW (Ta), 1.67W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 43.2pF @ 15V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 1.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 410mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 410mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PMZB1200UPEYL is a MOSFET of the single type and is used in a variety of applications. It is a lateral P-channel power MOSFET and boasts a maximum drain source voltage of -1200 V and a drain-source breakdown voltage of -1300 V. Additionally, it can handle an operating temperature of –65 to +175 oC and a drain-source current of 18.5 A. The PMZB1200UPEYL MOSFET is manufactured with the highest quality materials and is mainly used in industrial machinery and appliances.
MOSFETS are a type of transistor, and specifically are field effect transistors (FETs). Not like bipolar junction transistors, the FETs use an electric field to control the flow of electrons or current instead of current, meaning that they operate in a two-terminal, unipolar fashion instead of three-terminal, and are voltage-controlled instead of current-controlled. This makes them as more efficient than bipolar junction transistors and more suitable for certain applications. In terms of operation, FETS are normally off, meaning there is no current flowing between the drain and the source. When a voltage is applied to the gate, the MOSFET will allow current to flow between the drain and the source. Due to the electric field, it only allows current to flow in one direction.
The PMZB1200UPEYL MOSFET is one of the most popular in its class, due to its low on-resistance (Rds on) and its high breakdown voltage capability. The low Rds on makes it ideal for applications requiring high currents, as it enables the maximum current to be reached without exceeding the guaranteed values. The high breakdown voltage makes it suitable for very high impedances, thus allowing higher voltages to be applied. Depending on the application, a MOSFET can be used as either an amplifier or a switch.
As an amplifier, the MOSFET takes a small amount of charge provided by a voltage at its gate and amplifies it by controlling a larger current flowing between the source and the drain. This can be used to increase the gain of an audio amplifier, for example. It is also used extensively in power amplifiers, such as for loudspeakers.
As a switch, the MOSFET is also able to control current, by simply switching on and off its gate voltage. This offers several advantages over traditional switches, as it is much faster, more efficient and is much more reliable. Additionally, it is also capable of handling much higher currents than traditional switches.
The PMZB1200UPEYL MOSFET is used extensively in industrial machinery and appliances, due to its cost-efficiency, high temperature rating and large current handling capability. Additionally, its low Rds on and high breakdown voltage also make it well-suited for power converters and other similar applications. In terms of operation, it is ideal as an amplifier or a switch, offering an efficient, fast and reliable solution.
The specific data is subject to PDF, and the above content is for reference
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