PMZB390UNEYL

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PMZB390UNEYL is a metal-oxide semiconductor field-effect transistor (MOSFET). It is a single-channel MOSFET, meaning it has distinct source, drain and gate terminals. MOSFETs are also known as insulated-gate field-effect transistors (IGFETs) or metal-oxide semiconductor field-effect transistors (MOSFETs).

MOSFETs offer significant advantages over other types of transistors. They have a much higher transconductance than bulk gate FETs, due to their gate\'s ability to keep the same voltage across the drain and source terminals. MOSFETs also have a much lower on-resistance, which makes them ideal for switching applications. Additionally, because the MOSFET\'s gate can be isolated from the other two terminals, the defective layer of oxide prevents current from flowing into the gate and leads to a very low gate leakage current.

The PMZB390UNEYL is ideal for high-voltage switching applications such as motor control, rectifiers, solar controllers, lighting control, laser control, HVAC controllers, power supplies, and UPS systems. Its Avalanche Rugged Trench technology makes it well-suited for these applications. It features an UltraFET process technology, which allows for a higher drain-source breakdown voltage, improved switching times and lower on-resistance.

In operation, the PMZB390UNEYL functions by modulating the flow of current through the drain-source channel in accordance with the gate-source voltage. When the gate-source voltage is lower than the threshold voltage, the device is off and no current will flow. Once the gate-source voltage is higher than the threshold voltage, the device is on and current flows through the drain-source channel. This is known as the principle of “enhancement mode” operation.

The PMZB390UNEYL is constructed utilizing the Trench Cell® technology, which results in a trench-style gate structure for the device. This allows for a wide range of operation settings and increased performance. The features that make this device a great choice for high-voltage switching applications include its very low drain-source on-resistance, its low Miller Capacitance, and its fast switching times.

The PMZB390UNEYL is an ideal choice for applications in which a single-channel MOSFET is needed. Its high-voltage operation and fast switching time make it suitable for a number of switching application. Its Avalanche Rugged Trench technology also allows for better reliability and lower power dissipation.

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