PMZB290UN,315

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The PMZB290UN,315 is a source-to-drain enhanced, 15V logic level N-Channel MOSFET. It is designed to operate as a single device in low voltage applications. This MOSFET is designed with a low threshold voltage and long-channel design to minimize gate charge, making it ideal for high performance applications such as Bias, Start-up, and gate control.

The MOSFET’s drain-source breakdown rating is 15V which is sufficient to handle operations that involves relatively high voltage. The maximum current rating of this device is 2.5A which is adequate for applications where the component is expected to carry current or power. Additionally, the maximum drain-source ON resistance for this MOSFET is 0.035Ω which is essential for fast switching and improved efficiency.

The PMZB290UN,315 is a common-source MOSFET, meaning that it is equipped with a source, gate and drain connection in order to control the current flow from the source to the drain. The source connection is a source of electrons to which the drain-source path is connected, and the gate connection is used to control the current flow of these electrons between the source and drain. The key feature of this FET is its ability to be driven by a lowvoltage logic level, meaning that it is well-suited for applications that require efficient control of the voltage or current flow.

The PMZB290UN,315 is suitable for applications such as regulating the voltage or current of a power supply, amplifiers, line drivers, level shifters, and analog switches. Additionally, it is used in automotive and industrial applications where it is important to control inrush currents and provide power at low voltage levels. Furthermore, it can be used in DC to DC converters and switching power supplies requiring fast switching speeds and low on-resistance.

The working principle of the MOSFET is based on the “metal-oxide-semiconductor field-effect transistor” (MOSFET). In this type of transistor, the electrical characteristics of the drain-source current path are controlled by a voltage applied to the gate. A voltage between the gate and drain has the effect of changing the electric field in the area between the gate and channel, which changes the conductivity of the channel. This allows for the flow of current between the source and drain in response to the voltage applied to the gate.

As can be seen, the PMZB290UN,315 is a versatile and reliable device that can be used in a wide range of applications. Its low voltage logic level driving and low on-resistance capabilities make it an ideal choice for applications where efficient power delivery and continuous current control are necessary.

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