Allicdata Part #: | 1727-2333-2-ND |
Manufacturer Part#: |
PMZB950UPEYL |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 20V 3QFN |
More Detail: | P-Channel 20V 500mA (Ta) 360mW (Ta), 2.7W (Tc) Sur... |
DataSheet: | PMZB950UPEYL Datasheet/PDF |
Quantity: | 20000 |
10000 +: | $ 0.05974 |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Package / Case: | 3-XFDFN |
Supplier Device Package: | DFN1006B-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta), 2.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 43pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 2.1nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 500mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PMZB950UPEYL is an advanced N-channel Enhancement Mode MOSFET (E-Mode MOSFET) with a high-performance level. It is designed with a unique structure consisting of an insulated gate and an enhanced-drain-region structure. The PMZB950UPEYL is capable of operating at very high frequencies, and it also has a very low on-resistance due to its low threshold voltage.
The PMZB950UPEYL is a great choice for applications that require high-speed operation and low power consumption. This makes it suitable for applications such as switching power supplies, DC-DC converters, power converters, and motor control applications. In addition, the PMZB950UPEYL is also well-suited for switching AC power, because it has a low switch-on resistance and low capacitance.
The PMZB950UPEYL is an N-channel Enhancement Mode MOSFET and is designed for reliable and low-power switching. The MOSFET has a very low on-resistance and low capacitance, and its special structure allows it to operate at very high switching frequencies. It can also be used for logic signal transmission.
The PMZB950UPEYL has a robust design which makes it able to operate at temperatures up to 175 degrees Celsius. This makes it suitable for use in harsh environments, such as automotive and industrial applications. The MOSFET is also capable of withstanding high surge currents, making it suitable for applications such as high-speed automotive switching and motor control.
The PMZB950UPEYL is an E-Mode MOSFET and its working principle lies in the action of an insulated gate. The insulated gate creates an electric field in the thin-film part of the MOSFET, which in turn creates an inversion layer in the substrate as it conducts. This inversion layer creates a conduction path that is used to transmit electrical current. The insulated gate allows the PMZB950UPEYL to achieve very low on-resistance, as well as very high switching speeds.
Due to its high-performance level, the PMZB950UPEYL is an ideal choice for applications requiring low power consumption and high-speed operation. It is also suitable for automotive, industrial and logic signal applications. The PMZB950UPEYL has a very low on-resistance and low capacitance, making it well-suited for high-speed switching and power management. Furthermore, its robust design makes it suitable for use in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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