Allicdata Part #: | 1727-1378-2-ND |
Manufacturer Part#: |
PMZB290UNE,315 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 20V 1A DFN1006B-3 |
More Detail: | N-Channel 20V 1A (Ta) 360mW (Ta), 2.7W (Tc) Surfac... |
DataSheet: | PMZB290UNE,315 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.04057 |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Package / Case: | 3-XFDFN |
Supplier Device Package: | 3-DFN1006B (0.6x1) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta), 2.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 83pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 0.68nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 500mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PMZB290UNE,315 transistors are mainly used in electrical equipment such as semiconductor and power electronics. It is a Field Effect Transistor (FET). A FET is a three-terminal device in which the current is controlled by using the electric field to control the electric current that flows through a thin layer of semiconductor material between two electrodes. The electric field is generated by the gate voltage, which changes the electrical characteristics of the FET between the source and the drain.
Working principle
When a voltage is applied between the gate and the source, the electric field is created which causes a depletion region in the semiconductor material. This depletion region causes a depletion of the current between the source and the drain, allowing a small amount of current to flow. This current is controlled by adjusting the gate voltage. With increased gate voltage, the depletion region increases and the current reduces. Similarly, for decreased gate voltage, the depletion region decreases and the current increases. The electrical parameters of the transistor are controlled mainly through the gate voltage.
The PMZB290UNE,315 transistors have a high voltage capability with an operating voltage of up to 300 volts. It features low power consumption, low on-resistance, and fast switching. It is also has low gate threshold voltage, making it suitable for high-frequency applications. This is because it has low gate capacitance which results in less power loss during switching operations.
Application field
PMZB290UNE,315 transistors are widely used in motor control, power management, robotics, lighting, power conversion, converting DC to AC or AC to DC, and driver circuits. It can also be used in voltage regulators, audio amplifiers, and LED drivers. It can be used in automotive, industrial, and consumer applications as it provides a high efficiency in these areas.
PMZB290UNES,315 transistors are also used in RF transceivers and base station applications. It is also used in medical equipment, sensors, and measuring instruments, such as temperature control and pressure sensing. Additionally, it can be used in the manufacturing industry for general purpose switching and control applications. It is also used for data processing, switching applications, and digital logic.
PMZB290UNES,315 transistors are also suitable for high-power applications such as motor control, power supplies, and switches. It is also suitable for applications with high frequency switching. It is reliable, efficient and can handle high current and power.
In conclusion, PMZB290UNES,315 transistors are suitable for various application fields such as automotive, industrial, consumer, and manufacturing. It is a reliable and efficient three-terminal device with a wide operating voltage range and low power consumption. It is used for various high frequency and power applications, making it a versatile solution for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
PMZB300XN,315 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 20V 1A 3DFNN-... |
PMZB380XN,315 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 30V SGL 3DFNN... |
PMZB420UN,315 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 30V SGL 3DFNN... |
PMZB790SN,315 | Nexperia USA... | 0.0 $ | 1000 | MOSFET N-CH 60V SGL 3DFNN... |
PMZB550UNEYL | Nexperia USA... | 0.05 $ | 20000 | MOSFET N-CH 30V SOT883N-C... |
PMZB390UNEYL | Nexperia USA... | 0.05 $ | 1000 | MOSFET N-CH 30V SGL XQFN3... |
PMZB150UNEYL | Nexperia USA... | 0.05 $ | 20000 | MOSFET N-CH 20V SOT883N-C... |
PMZB200UNEYL | Nexperia USA... | 0.06 $ | 20000 | MOSFET N-CH 30V SOT883N-C... |
PMZB320UPEYL | Nexperia USA... | 0.06 $ | 10000 | MOSFET P-CH 30V SOT883P-C... |
PMZB290UN,315 | Nexperia USA... | 0.06 $ | 30000 | MOSFET N-CH 20V 1A 3DFNN-... |
PMZB670UPE,315 | Nexperia USA... | 0.06 $ | 20000 | MOSFET P-CH 20V 680MA DFN... |
PMZB950UPEYL | Nexperia USA... | 0.06 $ | 20000 | MOSFET P-CH 20V 3QFNP-Cha... |
PMZB950UPELYL | Nexperia USA... | 0.07 $ | 10000 | MOSFET P-CH 20V 500MA 3DF... |
PMZB600UNEYL | Nexperia USA... | 0.08 $ | 1000 | MOSFET N-CH 20V 3QFNN-Cha... |
PMZB350UPE,315 | Nexperia USA... | 0.08 $ | 10000 | MOSFET P-CH 20V 1A 3DFNP-... |
PMZB370UNE,315 | Nexperia USA... | 0.08 $ | 1000 | MOSFET N-CH 30V 0.9A DFN1... |
PMZB1200UPEYL | Nexperia USA... | 0.04 $ | 1000 | MOSFET P-CH 30V SOT883P-C... |
PMZB290UNE,315 | Nexperia USA... | 0.04 $ | 1000 | MOSFET N-CH 20V 1A DFN100... |
PMZB600UNELYL | Nexperia USA... | 0.05 $ | 1000 | MOSFET N-CH 20V 600MA 3DF... |
PMZB290UNE2YL | Nexperia USA... | 0.06 $ | 40000 | MOSFET N-CH 20V 1.2A XQFN... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...