PMZB380XN,315

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Package / Case:	3-XFDFN
Supplier Device Package:	3-DFN1006B (0.6x1)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	360mW (Ta), 2.7W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	56pF @ 25V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	0.87nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	460 mOhm @ 200mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	930mA (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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PMZB380XN,315 Application Field and Working Principle

Introduction

PMZB380XN,315 is a product from Shanghai NXP Semiconductor Technology Co., Ltd., which is a discrete, general-purpose N-channel MOSFET. It is designed for low-voltage, high-speed switching applications.

System Applications:

PMZB380XN,315 MOSFETs can be used in a variety of switching applications, including power supplies, motor drives, Lighting Control, Home Appliance,IoT, and has good characteristics for switching speed and high efficiency.

Choose The Appropriate Dissipation Power:

In order to ensure the safe operation of the device, it is very important to choose the appropriate power dissipation. The device’s static dissipation must be considered in each case. Generally speaking, as the temperature rises, power dissipation will also decrease. Therefore, it is necessary to choose an appropriate operating temperature, and then select the appropriate power dissipation according to the required power dissipation.

Working Principle of PMZB380XN,315

PMZB380XN,315 is a discrete, general-purpose N-channel MOSFET. Its working principle is to make the gate of the MOSFET be accurately controlled by an external circuit, and then the source is connected to the drain.When the gate voltage is higher than the threshold voltage, a metal oxide film channel is formed on the interface of the source and drain, making the gate and source become almost equivalent, thereby resulting in a low resistance channel between the source and drain. In addition, the body diode formed between the drain and source also functions as an impedance when the drain is unconnected. This impedance allows the MOSFET to turn off internally when the gate voltage drops below the threshold voltage.

Conclusion

PMZB380XN,315 is an N-channel MOSFET that can be used in a variety of switching applications. It has a low threshold voltage and high switching speed, and its power dissipation can be accurately controlled by external circuits. The device has a built-in body diode, which can be used to control the impedance when the drain is disconnected. Overall, the PMZB380XN,315 MOSFET is a very useful device in various switching applications that can efficiently control large currents and circuits.

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