PMZB790SN,315

PMZB790SN, 315 Application Field and Working Principle

The PMZB790SN, 315 is an enhancement-mode metal-oxide semiconductor field-effect transistor (MOSFET), a member of the single-gate MOSFETs family. The device is mainly used as an H-bridge (used to drive an electrical load from two sources independently of each other) to drive electrical applications such as automotive, industrial, and consumer electronics.

The device consists of an oxygen-doped silicon body and a source, a drain, and a gate. The source and the drain are typically P-type material, while the gate is usually N-type material. The PMZB790SN, 315 MOSFET is designed to have a low on-resistance, typically 0.79 ohm, enabling it to handle high currents of up to 8.5Amps.

The PMZB790SN, 315 MOSFET can operate over a wide temperature range, -55 degrees to +150 degrees Celsius, providing designers with a wide range of operating temperature options. Additionally, the device features fast switching speeds to reduce system costs.

The PMZB790SN, 315 MOSFETs are widely used for a variety of applications, including automotive, power management, medical, consumer electronics and home automation systems.

Working Principle

At the heart of a MOSFET is the gate, which is used to control the flow of current between the source and the drain. When the gate is biased with a positive voltage with respect to the source, a depletion region is formed in the channel between the source and the drain. This depletion region acts as a resistance and blocks current flow between the source and the drain.

When the gate voltage exceeds a certain threshold (which depends on the type of MOSFET and the material used to make the gate) current will be allowed to flow through the channel, thus allowing the MOSFET to amplify the input voltage. This is the basic working principle of a MOSFET.

Conclusion

The PMZB790SN, 315 is an enhancement-mode metal-oxide semiconductor field-effect transistor (MOSFET), a member of the single-gate MOSFETs family. It is mainly used as an H-bridge to drive electrical applications such as automotive, industrial, and consumer electronics. The PMZB790SN, 315 MOSFETs offer a low on-resistance, wide temperature range, and fast switching speeds. The device works by using the gate voltage to control the flow of current between the source and the drain, and it amplifies the input voltage when the gate voltage exceeds a certain threshold.