Allicdata Part #: | 1727-7378-2-ND |
Manufacturer Part#: |
PMZB600UNELYL |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 20V 600MA 3DFN1006B |
More Detail: | N-Channel 20V 600mA (Ta) 360mW (Ta) Surface Mount ... |
DataSheet: | PMZB600UNELYL Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.04637 |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Package / Case: | 3-XFDFN |
Supplier Device Package: | 3-DFN1006B (0.6x1) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 21.3pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 0.7nC @ 4.5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 620 mOhm @ 600mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 600mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PMZB600UNELYL is a type of single Metal Oxide Semiconductor Field Effect Transistor, or MOSFET. This component is used in a wide range of electronic products, and its versatile design enables it to be used in a variety of applications. In this article, we’ll look at the application field and working principle of the PMZB600UNELYL.
Application Field
The PMZB600UNELYL has a wide range of applications. It is commonly used in analogue and digital circuits, such as amplifiers, power management systems, and data acquisition systems. It can also be used for switching applications due to its low on-state resistance. Its wide range of applications makes it a versatile and reliable component for many applications.
The PMZB600UNELYL has a high drain source breakdown voltage rating of 600V, making it an ideal choice for high-voltage applications. It also has a low gate threshold voltage of 1.5V, which makes it a suitable component for low power applications. It has a low gate charge, which helps to reduce the switching time of the device and results in a faster response time. Furthermore, it has a low thermal resistance, making it ideal for use in high-temperature applications.
Working Principle
The PMZB600UNELYL is an enhancement-mode MOSFET, which means it does not require an application of voltage to the gate for conduction to occur. It functions by passing current through the source to the drain in a non-linear manner. The drain-source resistance, also known as the on-state resistance, is controlled by the amount of gate voltage applied to the device. The gate voltage controls the amount of current that can be passed through the device, making it an ideal choice for applications that require precise control over the amount of current flowing through the device.
The PMZB600UNELYL is typically used as an amplifier. When a voltage is applied to the gate, the drain-source resistance increases, allowing current to flow through the device. This current is then amplified by the device and can be used to drive another stage or output device.
The PMZB600UNELYL also has high input and output impedance. Input impedance is the degree to which the device impedes the flow of current from the input to the output. Output impedance is the degree to which the device impedes the flow of current from the output to the input. High input and output impedance make the PMZB600UNELYL well-suited for use in amplifier circuits where high impedance is essential.
The PMZB600UNELYL is a versatile and reliable component that can be used in a wide range of applications. Its wide range of features and its ability to provide precise control over the amount of current flowing through the device make it an ideal choice for many electronic applications. Whether you’re looking for a component to use in analog or digital circuits or you need a device for high voltage or high temperature applications, the PMZB600UNELYL might be the right choice for your needs.
The specific data is subject to PDF, and the above content is for reference
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