PMZB320UPEYL Allicdata Electronics
Allicdata Part #:

1727-2329-2-ND

Manufacturer Part#:

PMZB320UPEYL

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET P-CH 30V SOT883
More Detail: P-Channel 30V 1A (Ta) 350mW (Ta), 6.25W (Tc) Surfa...
DataSheet: PMZB320UPEYL datasheetPMZB320UPEYL Datasheet/PDF
Quantity: 10000
10000 +: $ 0.05278
Stock 10000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 950mV @ 250µA
Package / Case: 3-XFDFN
Supplier Device Package: DFN1006B-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 122pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 510 mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The PMZB320UPEYL field-effect transistor (FET) is a single, n-channel vertical MOSFET that is commonly used in electronic circuit designs due to its low on-resistance and high drain-source voltage rating. It offers an excellent combination of switching speed and power dissipation, making it suitable for applications such as power regulation and high-frequency switching. This article will discuss the working principle of the PMZB320UPEYL and its applications.

The PMZB320UPEYL is based on a vertical MOSFET structure, which consists of a source, drain and a channel connecting them. The source and drain are connected to voltage sources, while the channel is a layer of polysilicon that acts as a electrically isolated gate. When a voltage is applied to the gate, it attracts electrons in the channel, causing the channel to become conductive, which allows for current to flow between the source and the drain. This process is known as gate-controlled current flow and is the basic principle behind the operation of a FET.

The PMZB320UPEYL has a low on-resistance of just 5 ohms, making it suitable for applications that require low currents. This, combined with its high drain-source voltage rating of up to 20V, makes it a great choice for applications such as switching regulators, DC-DC converters and other high frequency switching circuits. The device also has a maximum drain current rating of 2amps and a maximum gate-drain capacitance of 150pF, enabling it to handle high frequency switching applications. These features make the PMZB320UPEYL a cost-efficient and reliable solution for a variety of applications.

The PMZB320UPEYL can be used in a wide range of applications, including switching regulators, DC-DC converters, signal processing, digital logic circuits and pulse-width modulation (PWM). It is also suitable for use in inverters, motor control and other power electronics. The excellent combination of switching speed and power dissipation makes it an ideal choice for applications that require high performance and reliability.

The PMZB320UPEYL is designed for reliability and performance, making it perfect for use in industrial and automotive applications. It offers an ideal combination of switching speed and power dissipation, making it a great choice for applications such as switching regulators, pulse-width modulation and other high-frequency circuits. The device also offers an excellent on-resistance rating and high drain-source voltage rating, making it suitable for a variety of applications.

In conclusion, the PMZB320UPEYL FET is a single channel n-type MOSFET with excellent switching speed and power dissipation. The device offers an excellent on-resistance and a high drain-source voltage rating, making it suitable for a wide range of applications. The excellent combination of switching speed and power dissipation makes it ideal for applications such as switching regulators, DC-DC converters, signal processing, digital logic circuits and pulse-width modulation. It is also suitable for use in industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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