R6012FNJTL Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	5V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	LPTS (SC-83)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1300pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	510 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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The R6012FNJTL is a N-channel, high-speed, low-threshold, MOSFET transistor. It is a surface-mount, symmetrical, high-reliability device, designed to provide superior protection and performance in power management applications. The R6012FNJTL is designed to provide superior performance in power management applications, such as motor control and switching, switch-mode power supply, general high-speed switching, logic-level conversion and power factor correction. Its enhanced features provide superior protection and performance when compared to traditional MOSFETs, such as low output capacitance, low on-state and off-state leakage currents and fast switching speeds. It has an RDS(on) of 40 ohms and an ID(on) rating of 14.1A. It is ideal for high-frequency switching and low-voltage logic level signals, and is available in a surface-mount, symmetrical, low-profile package.The R6012FNJTL MOSFET transistor is a high-performance device, capable of providing superior performance in power management applications due to its enhanced features. It features low on-state and off-state leakage current, low input and output capacitance, and fast switching speeds, providing improved reliability and enhanced protection.The R6012FNJTL is a N-channel, enhancement-mode, MOSFET transistor which has a low drain-to-source on-state resistance and a low threshold voltage. It is available in an electronic package and is ideal for power electronics applications such as motor control and switching, switch-mode power supplies, general high-speed switching, logic-level conversion and power factor correction.The working principle of the R6012FNJTL is based on the basic working principle of the MOSFET, which is the same for most transistors. It is based on the principle of the controlling of the current flow between the drain and the source terminals by using the voltage applied to the control gate.When the voltage applied to the control gate is positive, the current will be allowed to flow between the drain and the source terminals, which is known as the "on-state" of the transistor. Conversely, when the voltage applied to the control gate is negative, the current will not be allowed to flow between the drain and the source terminals, and is known as the "off-state" of the transistor.The R6012FNJTL is a high-performance device and can be used in a variety of applications, such as motor control, switch-mode power supplies, general high-speed switching, logic-level conversion and power factor correction. It has a low drain-to-source on-state resistance and a low threshold voltage, which helps reduce power loss and improves efficiency. In addition, it has a fast switching speed, which makes it suitable for applications requiring high-speed operation. The R6012FNJTL can also be used as a logic level converter as it has a low drain-to-source on-state resistance, which helps ensure that logic-level signals are correctly interpreted. This can be used to convert logic-level signals from one voltage level to another, and can be used to interface different integrated circuit packages used in the same application. In summary, the R6012FNJTL is a high-reliability, low-threshold, N-channel, MOSFET transistor designed to provide superior protection and performance in power management applications. It features low output capacitance, low on-state and off-state leakage current and fast switching speeds, and is ideal for high-frequency switching, low-voltage logic level signals, motor control, switch-mode power supplies, general high-speed switching, logic-level conversion and power factor correction.

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