R6015KNZC8

Vgs(th) (Max) @ Id:	5V @ 1mA
Package / Case:	TO-3P-3 Full Pack
Supplier Device Package:	TO-3PF
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	60W (Tc)
FET Feature:	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds:	1050pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	27.5nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	290 mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	15A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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R6015KNZC8 is a high power N-channel MOSFET, with a maximum power rating of 1.5KW at 175oC. It is widely used in various applications, such as switching, power management and audio amplifiers. This MOSFET has an extremely low input capacitance, low on-state resistance, and high-speed switching characteristics which make it suitable for high-frequency digital power circuits. Working PrincipleMOSFETS, or metal oxide semiconductor Field effect transistors, are a type of field effect transistor. Unlike the bipolar transistor, which requires two P-N junctions, a MOSFET requires only one P-N junction. A MOSFET consists of the gate, source and drain terminals. When a positive voltage is applied to the gate terminal, the electric field induces a depletion layer around the active region, which will reduce the width of the N-channel. This change in width modulates the pinch off voltage, which is used to control the current flow between the source and drain terminals. By altering the voltage on the gate terminal, the MOSFET can alter the resistance and act as an amplifier or a switch. Applications The R6015KNZC8 is ideal for applications that require low on-state resistance, high power capabilities and high-speed switching. Due to its large area and excellent thermal characteristics, it is ideally suited for high-frequency circuits that must handle high dissipation power levels. It is also suitable for switching power supplies, audio amplifiers and DC-DC converters. Additionally, the low input capacitance of the R6015KNZC8 makes it suitable for high-speed switching applications. One of its most common uses is in home appliance power management systems, where the MOSFET can be used as a low side switch to manage the current flow to the appliance. The R6015KNZC8 also excels as a low side switch in battery management systems. In these systems, it can be used to rapidly switch high currents between the battery and its associated load, while minimizing power dissipation. This makes the R6015KNZC8 perfect for applications such as laptop charging, motor control and power regulation. Additionally, it is also suitable for high-power, high-speed applications such as automotive power switching and HVAC systems. In conclusion, the R6015KNZC8 is an excellent choice for a variety of applications that require low on-state resistance, high power capabilities, and high-speed switching. Its low input capacitance and high current-handling capabilities make it particularly suitable for switching power supplies, audio amplifiers, and battery management systems. Its robust design and excellent thermal characteristics make it an ideal choice for applications that require high efficiency and long life.

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